Time evolution of the screening of piezoelectric fields in InGaN quantum wells

IEEE Journal of Quantum Electronics

Volumn 42, Issue 12, 2006, Pages 1202-1208

  Brown, Iain H ^a   Blood, Peter ^a   Smowton, Peter M ^a   Thomson, John D ^a   Olaizola, Santiago M ^b,c   Fox, A Mark ^b   Parbrook, Peter J ^b   Chow, Weng W ^a,d  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c CEIT   (Spain)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; LIGHT EMISSION; PIEZOELECTRICITY; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSPARENCY;

BANDGAP RENORMALIZATION; EMISSION INTENSITY; INDIUM GALLIUM NITRIDE; INTERNAL PIEZOELECTRIC FIELD; PULSED OPTICAL EXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33751372769     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.883472     Document Type: Article

References (14)

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