Control of quantum-confined stark effect in InGaN-based quantum wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1080-1091

  Ryou, Jae Hyun ^a   Yoder, P Douglas ^a   Liu, Jianping ^a   Lochner, Zachary ^a   Kim, Hyunsoo S ^a   Choi, Suk ^a   Kim, Hee Jin ^a   Dupuis, Russell D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Epitaxial growth; LEDs; Piezoelectricity; Quantum wells; Quantum confined Stark effect (QCSE); Semiconductor lasers

Indexed keywords

ACTIVE REGIONS; CRYSTALLINE STRUCTURE; DOPING CONTROL; GROWTH DIRECTIONS; INTERNAL FIELD; LEDS; OPTICAL AND ELECTRICAL PROPERTIES; PERFORMANCE METRICS; QUANTUM WELL; QUANTUM WELLS; QUANTUM-CONFINED STARK EFFECT; QUANTUM-CONFINED STARK EFFECT (QCSE); SOLID-STATE LIGHTING APPLICATION; TECHNOLOGICAL DEVELOPMENT; VISIBLE LIGHT EMITTERS; WURTZITES;

CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INDIUM; LASERS; OPTICAL PROPERTIES; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; POLARIZATION; PYROELECTRICITY; QUANTUM WELL LASERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPY; STARK EFFECT; TECHNOLOGICAL FORECASTING; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70349316517     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2014170     Document Type: Article

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