Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Journal of Crystal Growth

Volumn 370, Issue , 2013, Pages 57-62

  Pantzas, K ^a,b   El Gmili, Y ^b   Dickerson, J ^a,b   Gautier, S ^b,c   Largeau, L ^d   Mauguin, O ^d   Patriarche, G ^d   Suresh, S ^b   Moudakir, T ^b   Bishop, C ^a,b   Ahaitouf, A ^b   Rivera, T ^e   Tanguy, C ^e,f   Voss, P L ^a,b   Ougazzaden, A ^a,b  

^a GEORGIA TECH LORRAINE   (France)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^c SUPELEC   (France)

^d CNRS   (France)

^e ORANGE LABS   (France)

^f SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds; B3. Solar cells

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

ABSORPTION LAYER; EFFECTIVE SUPPRESSION; HAADF-STEM; IN-CONTROL; INGAN EPILAYERS; SEMICONDUCTING TERNARY COMPOUNDS; SINGLE PHASE; ULTRA-THIN;

EPILAYERS;

EID: 84883741780     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.08.041     Document Type: Article

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