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Volumn 54, Issue 10, 2010, Pages 1119-1124

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Author keywords

Efficiency droop; III Nitride; InGaN QWs; Light emitting diodes

Indexed keywords

BAND GAPS; BARRIER SYSTEMS; CURRENT INJECTION EFFICIENCY; DIFFUSION CARRIERS; III-NITRIDE; INGAN QUANTUM WELLS; INGAN QW; INGAN QWS; INJECTION CURRENT DENSITY; INJECTION EFFICIENCY; INTERNAL QUANTUM EFFICIENCY; ON CURRENTS; SINGLE QUANTUM WELL; THIN LAYERS;

EID: 77955415098     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.05.019     Document Type: Article
Times cited : (210)

References (40)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.