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Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2) David, Auŕlien a Grundmann, Michael J a

a Philips Lumileds Lighting Company (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABC MODEL; CARRIER DENSITY; DOUBLE HETEROSTRUCTURES; INGAN/GAN; INJECTION CONDITIONS; INTERNAL QUANTUM EFFICIENCY; NON-RADIATIVE; NON-RADIATIVE LIFETIMES; PHASE SPACES; RECOMBINATION PROCESS;

CARRIER LIFETIME; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; PHASE SPACE METHODS; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM EFFICIENCY;

EID: 77949745836 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3330870 Document Type: Article

Times cited : (310)

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