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Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

On ternary nitride substrates for visible semiconductor light-emitters

(2) Sharma, T K a Towe, E b

a CARNEGIE MELLON UNIVERSITY (United States)

b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION-ORIENTED; DEVICE STRUCTURES; DISLOCATION GENERATION; LATTICE-MATCHED; LATTICE-MATCHED STRUCTURES; RED LASERS; SAPPHIRE SUBSTRATES; SPECTRAL BAND; SUBSTRATE MATERIAL; TERNARY NITRIDES; THERMAL MISMATCH; VISIBLE SPECTRA;

GALLIUM ALLOYS; GALLIUM NITRIDE; LATTICE MISMATCH; SEMICONDUCTOR LASERS;

SUBSTRATES;

EID: 77953003003 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3425885 Document Type: Article

Times cited : (26)

References (20)

1
- 69249161823
- APPLAB 0003-6951. 10.1063/1.3206739
- A. Avramescu, T. Lermer, J. Müller, S. Tautz, D. Queren, S. Lutgen, and U. StrauΒ, Appl. Phys. Lett. APPLAB 0003-6951 95, 071103 (2009). 10.1063/1.3206739
- (2009) Appl. Phys. Lett. , vol.95 , pp. 071103
- Avramescu, A.¹ Lermer, T.² Müller, J.³ Tautz, S.⁴ Queren, D.⁵ Lutgen, S.⁶ Strau, U.⁷

2
- 67949092890
- APECE4 1882-0778. 10.1143/APEX.2.062201
- T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, Appl. Phys. Express APECE4 1882-0778 2, 062201 (2009). 10.1143/APEX.2.062201
- (2009) Appl. Phys. Express , vol.2 , pp. 062201
- Miyoshi, T.¹ Masui, S.² Okada, T.³ Yanamoto, T.⁴ Kozaki, T.⁵ Nagahama, S.⁶ Mukai, T.⁷

3
- 68949141593
- APECE4 1882-0778. 10.1143/APEX.2.082101
- Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, Appl. Phys. Express APECE4 1882-0778 2, 082101 (2009). 10.1143/APEX.2.082101
- (2009) Appl. Phys. Express , vol.2 , pp. 082101
- Enya, Y.¹ Yoshizumi, Y.² Kyono, T.³ Akita, K.⁴ Ueno, M.⁵ Adachi, M.⁶ Sumitomo, T.⁷ Tokuyama, S.⁸ Ikegami, T.⁹ Katayama, K.¹⁰ Nakamura, T.¹¹

4
- 61849104076
- MRSBEA 0883-7694.
- S. Nakamura, MRS Bull. MRSBEA 0883-7694 34, 101 (2009).
- (2009) MRS Bull. , vol.34 , pp. 101
- Nakamura, S.¹

5
- 61349183692
- APPLAB 0003-6951. 10.1063/1.3089573
- D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. StrauΒ, Appl. Phys. Lett. APPLAB 0003-6951 94, 081119 (2009). 10.1063/1.3089573
- (2009) Appl. Phys. Lett. , vol.94 , pp. 081119
- Queren, D.¹ Avramescu, A.² Brüderl, G.³ Breidenassel, A.⁴ Schillgalies, M.⁵ Lutgen, S.⁶ Strau, U.⁷

6
- 70349105024
- APECE4 1882-0778. 10.1143/APEX.2.092101
- Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, Appl. Phys. Express APECE4 1882-0778 2, 092101 (2009). 10.1143/APEX.2.092101
- (2009) Appl. Phys. Express , vol.2 , pp. 092101
- Yoshizumi, Y.¹ Adachi, M.² Enya, Y.³ Kyono, T.⁴ Tokuyama, S.⁵ Sumitomo, T.⁶ Akita, K.⁷ Ikegami, T.⁸ Ueno, M.⁹ Katayama, K.¹⁰ Nakamura, T.¹¹

7
- 0030217465
- ADVMEW 0935-9648. 10.1002/adma.19960080821
- S. Nakamura, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 8, 689 (1996). 10.1002/adma.19960080821
- (1996) Adv. Mater. (Weinheim, Ger.) , vol.8 , pp. 689
- Nakamura, S.¹

8
- 66749164675
- MRSBEA 0883-7694.
- H. Ohta and K. Okamoto, MRS Bull. MRSBEA 0883-7694 34, 324 (2009).
- (2009) MRS Bull. , vol.34 , pp. 324
- Ohta, H.¹ Okamoto, K.²

9
- 66849129387
- MRSBEA 0883-7694.
- F. Scholz, T. Wunderer, B. Neubert, M. Faneberg, and K. Thonke, MRS Bull. MRSBEA 0883-7694 34, 328 (2009).
- (2009) MRS Bull. , vol.34 , pp. 328
- Scholz, F.¹ Wunderer, T.² Neubert, B.³ Faneberg, M.⁴ Thonke, K.⁵

10
- 75749099735
- JAPIAU 0021-8979, () 10.1063/1.3280033; US Patent priority Application No. US 61/279,994 (pending).
- T. K. Sharma and E. Towe, J. Appl. Phys. JAPIAU 0021-8979 107, 024516 (2010) 10.1063/1.3280033; US Patent priority Application No. US 61/279,994 (pending).
- (2010) J. Appl. Phys. , vol.107 , pp. 024516
- Sharma, T.K.¹ Towe, E.²

11
- 73349091518
- IETDAI 0018-9383. 10.1109/TED.2009.2033773
- H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, IEEE Trans. Electron Devices IETDAI 0018-9383 57, 88 (2010). 10.1109/TED.2009.2033773
- (2010) IEEE Trans. Electron Devices , vol.57 , pp. 88
- Masui, H.¹ Nakamura, S.² Denbaars, S.P.³ Mishra, U.K.⁴

12
- 0141990606
- JAPIAU 0021-8979. Updated values of the band gaand lattice constant were taken from Ref.. 10.1063/1.1600519
- I. Vurgaftman and J. R. Meyer, J. Appl. Phys. JAPIAU 0021-8979 94, 3675 (2003). Updated values of the band gap and lattice constant were taken from Ref.. 10.1063/1.1600519
- (2003) J. Appl. Phys. , vol.94 , pp. 3675
- Vurgaftman, I.¹ Meyer, J.R.²

13
- 0042978376
- JAPIAU 0021-8979. 10.1063/1.364074
- A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. JAPIAU 0021-8979 81, 417 (1997). 10.1063/1.364074
- (1997) J. Appl. Phys. , vol.81 , pp. 417
- Shikanai, A.¹ Azuhata, T.² Sota, T.³ Chichibu, S.⁴ Kuramata, A.⁵ Horino, K.⁶ Nakamura, S.⁷

14
- 71749099583
- JAPIAU 0021-8979. 10.1063/1.3257263
- T. K. Sharma and E. Towe, J. Appl. Phys. JAPIAU 0021-8979 106, 104509 (2009). 10.1063/1.3257263
- (2009) J. Appl. Phys. , vol.106 , pp. 104509
- Sharma, T.K.¹ Towe, E.²

15
- 67049171363
- APPLAB 0003-6951. 10.1063/1.3133359
- K. T. Delaney, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. APPLAB 0003-6951 94, 191109 (2009). 10.1063/1.3133359
- (2009) Appl. Phys. Lett. , vol.94 , pp. 191109
- Delaney, K.T.¹ Rinke, P.² Van De Walle, C.G.³

16
- 3142776253
- APPLAB 0003-6951. 10.1063/1.1765208
- K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jianga, Appl. Phys. Lett. APPLAB 0003-6951 84, 5264 (2004). 10.1063/1.1765208
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5264
- Nam, K.B.¹ Li, J.² Nakarmi, M.L.³ Lin, J.Y.⁴ Jianga, H.X.⁵

17
- 67649197423
- PSSBBD 0370-1972. 10.1002/pssb.200880798
- J. Bhattacharyya, S. Ghosh, and H. T. Grahn, Phys. Status Solidi B PSSBBD 0370-1972 246, 1184 (2009). 10.1002/pssb.200880798
- (2009) Phys. Status Solidi B , vol.246 , pp. 1184
- Bhattacharyya, J.¹ Ghosh, S.² Grahn, H.T.³

18
- 0028380709
- IEJQA7 0018-9197. 10.1109/3.283784
- E. P. O'Reilly and A. R. Adams, IEEE J. Quantum Electron. IEJQA7 0018-9197 30, 366 (1994). 10.1109/3.283784
- (1994) IEEE J. Quantum Electron. , vol.30 , pp. 366
- O'Reilly, E.P.¹ Adams, A.R.²

19
- 70349327951
- IJSQEN 1077-260X. 10.1109/JSTQE.2009.2015057
- T. Paskova and K. R. Evans, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 15, 1041 (2009). 10.1109/JSTQE.2009.2015057
- (2009) IEEE J. Sel. Top. Quantum Electron. , vol.15 , pp. 1041
- Paskova, T.¹ Evans, K.R.²

20
- 15844389872
- III-V Ternary bulk substrate growth technology: A review
- DOI 10.1016/j.jcrysgro.2004.10.073, PII S0022024804013892, Proceeedings of the 14th International Conference on Crystal Growth and the 12th International Conference on Vapor Growth and Epitaxy
- P. S. Dutta, J. Cryst. Growth JCRGAE 0022-0248 275, 106 (2005). 10.1016/j.jcrysgro.2004.10.073 (Pubitemid 40421033)
- (2005) Journal of Crystal Growth , vol.275 , Issue.1-2 , pp. 106-112
- Dutta, P.S.¹

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