Novel epitaxial nanostructures for the improvement of ingan leds efficiency

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1073-1079

  Jung, Taeil ^a   Lee, Luke K ^a   Ku, P C ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Light emitting diodes; Nanotechnology; Quantumconfined Stark effect; Semiconductor epitaxial layers

Indexed keywords

ELECTRICAL INJECTION; EPITAXIAL NANOSTRUCTURES; EX SITU; GAN TEMPLATE; IN-SITU; INGAN LED; INGAN-BASED LED; INGAN/GAN; INGAN/GAN MQWS; INTERNAL QUANTUM EFFICIENCY; LED STRUCTURE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; NANO-STRUCTURED; PHOTON EXTRACTION EFFICIENCY; PL INTENSITY; PLANE SAPPHIRE; QUANTUMCONFINED STARK EFFECT; RADIATIVE RECOMBINATION; SEMICONDUCTOR EPITAXIAL LAYERS; SEMIPOLAR; SURFACE-TEXTURING; TIME-RESOLVED PHOTOLUMINESCENCE;

CORUNDUM; CRYSTAL GROWTH; CURRENT DENSITY; EPITAXIAL LAYERS; EXTRACTION; FABRICATION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; STARK EFFECT; SURFACE STRUCTURE; TEXTURING;

GALLIUM ALLOYS;

EID: 70349336989     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2016437     Document Type: Article

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