RF performance of AlGaN/GaN high-electron-mobility transistors grown on silicon (110)

Applied Physics Express

Volumn 4, Issue 6, 2011, Pages

  Marti, Diego ^a   Bolognesi, C R ^a   Cordier, Yvon ^b   Chmielowska, Magdalena ^b   Ramdani, Mohammed ^b  

^a ETH ZURICH   (Switzerland)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; GATE LENGTH; HIGH-RESISTIVITY SUBSTRATE; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE PERFORMANCE; RF PERFORMANCE; SI(110);

CUTOFF FREQUENCY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79958779447     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.064105     Document Type: Article

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