High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 874-876

  Medjdoub, F ^a   Zegaoui, M ^a   Ducatteau, D ^a   Rolland, N ^a   Rolland, P A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

AlN GaN high electron mobility transistor (HEMT); high output current density; low leakage; Si substrate

Indexed keywords

ALN; CURRENT GAINS; DRAIN LEAKAGE CURRENT; GATE LENGTH; HIGH ASPECT RATIO; HIGH OUTPUT; IN-SITU; LOW LEAKAGE; MAXIMUM OSCILLATION FREQUENCY; RF PERFORMANCE; SI SUBSTRATE; SI SUBSTRATES; SILICON SUBSTRATES; SUBSTRATE INTERFACE; ULTRA-THIN BARRIERS;

ASPECT RATIO; CUTOFF FREQUENCY; ELECTRON MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICON; SILICON NITRIDE; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79959787806     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2138674     Document Type: Article

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