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Volumn 2005, Issue , 2005, Pages 483-486
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150 W GaN-on-Si RF power transistor
a a a a a a a a a a a a a |
Author keywords
AlGaN GaN HFETs; GaN high electron mobility transistor (HEMTs); Linearity; Reliability; RF power transistors
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Indexed keywords
CODE DIVISION MULTIPLE ACCESS;
ELECTRIC POTENTIAL;
HIGH ELECTRON MOBILITY TRANSISTORS;
LINEAR SYSTEMS;
PHASE MODULATION;
RELIABILITY;
SILICON SENSORS;
TRANSISTORS;
ADJACENT CHANNEL POWER RATIO (ACPR);
ALGAN/GAN HFETS;
LINEARITY;
RF POWER TRANSISTORS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 25444528674
PISSN: 0149645X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/MWSYM.2005.1516635 Document Type: Conference Paper |
Times cited : (51)
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References (7)
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