Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 53-55

  Simin, G ^a   Hu, X ^a   Ilinskaya, N ^a   Zhang, J ^a   Tarakji, A ^a   Kumar, A ^a   Yang, J ^a   Asif Khan, M ^a   Gaska, R ^b   Shur, M S ^b  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HETEROJUNCTIONS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); SATURATION CURRENTS;

MOSFET DEVICES;

EID: 17744401158     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902829     Document Type: Article

References (8)

1. S. T. Sheppard et al., "High power demonstration at 10 GHz with GaN/AlGaN HEMT hybrid amplifier," in Device Research Conf., CO, June 19-21, 2000, Conference Digest, p. 37.
2. N. X. Nguyen et al., "High performance microwave power GaN/AlGaN MODFET's grown by RF-assisted MBE," Electron. Lett., vol. 36, no. 5, pp. 468-469, 2000.
3. Y.-F. Wu et al., "High Al-content AlGaM/GaN HEMT's on SiC substrates with very highpower performance," in IEDM Tech. Dig., Dec. 6-8, 1999, pp. 925-927.
4. Y.-F. Wu et al., "Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors," Appl. Phys. Lett., vol. 69, pp. 1438-1440, 1996.
5. M. Asif Khan et al., "AlGaN/GaN metal - oxide - semiconductor heterostructure field effect transistor," IEEE Electron Device Lett., vol. 2 , pp. 63-65, 2000.
6. M. Asif Khan, X. Hu, G. Simin, J. Yang, R. Gaska, and M. S. Shur, "AlGaN/GaN metal - oxide - semiconduclor heterostructure field effect transistors on SiC substrates," Appl. Phys. Lett., vol. 77, pp. 1339-134 , 2000.
7. F. Hasegawa, "Power GaAs FETs," in GaAs FET Principles and Technology, J. V. DiLorenzo and D. D. Khandelwal, Eds. Reading, MA: Artech House, 1982, pp. 219-255.
8. S. H. Wemple and H. C. Huang, "Thermal design of power GaAs FETs," in GaAs FET Principles and Technology, J. V. DiLorenzo and D. D. Khandelwal, Eds. Reading, MA: Artech House, 1982, pp. 309-347.