High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Microwave and Optical Technology Letters

Volumn 48, Issue 11, 2006, Pages 2303-2305

  Werquin, M ^a   Ducatteau, D ^a   Vellas, N ^a   Delos, E ^a   Cordier, Y ^c   Aubry, R ^b   Gaquiere C ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b Alcatel Thales   (France)

^c CRHEA CNRS   (France)

Author keywords

AlGaN GaN; HEMT; High temperature; Pulsed measurements

Indexed keywords

ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; MICROWAVE GENERATION; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON;

ALGAN/GAN; MICROWAVE FREQUENCIES; PULSED MEASUREMENTS; RADIO FREQUENCIES PULSES;

LASER PULSES;

EID: 33749363991     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.21897     Document Type: Article

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