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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

(11) Cordier, Y a Lecotonnec, A a Chenot, S a Baron, N a,b Nacer, F c Goullet, A c Lhermite, H d Kazzi, M El e Regreny, P e Hollinger, G e Besland, M P c

a CRHEA CNRS (France)

b Picogiga International (France)

c UNIVERSITÉ DE NANTES (France)

d UNIVERSITÉ DE RENNES 1 (France)

e CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CAPACITANCE; DIELECTRIC FILMS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTERFACES (MATERIALS); MIS DEVICES; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE;

ALGAN/GAN MIS-HEMTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE MEASUREMENT; DEPOSITION CONDITIONS; DIELECTRIC LAYER; INTERFACE FORMATION; REFERENCE DEVICES; SI(111) SUBSTRATE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350128868 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200880870 Document Type: Article

Times cited : (7)

References (11)

1
- 0035278804
- R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 560
- Vetury, R.¹ Zhang, N.Q.² Keller, S.³ Mishra, U.K.⁴

2
- 36749083413
- T. Oku, Y. Kamo, and M. Totsuka, Thin Solid Films, 516, 545 (2008).
- (2008) Thin Solid Films , vol.516 , pp. 545
- Oku, T.¹ Kamo, Y.² Totsuka, M.³

3
- 1242285005
- S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and Y. Sano, Appl. Phys. Lett. 84, 613 (2004).
- (2004) Appl. Phys. Lett , vol.84 , pp. 613
- Arulkumaran, S.¹ Egawa, T.² Ishikawa, H.³ Jimbo, T.⁴ Sano, Y.⁵

4
- 79955989017
- T. Hashizume and Y. Nakasaki, Appl. Phys. Lett. 80, 4564 (2002).
- (2002) Appl. Phys. Lett , vol.80 , pp. 4564
- Hashizume, T.¹ Nakasaki, Y.²

5
- 0035278795
- E. Chumbes, J. A. Smart, T. Prunty, and J. R. Shealy, IEEE Trans. Electron Devices 48, 416 (2001).
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 416
- Chumbes, E.¹ Smart, J.A.² Prunty, T.³ Shealy, J.R.⁴

6
- 0035934801
- X. Hu, A. Koudymov, G. Simin, J. Yang, and M. Asif Khan, Appl. Phys. Lett. 79, 2832 (2001).
- (2001) Appl. Phys. Lett. , vol.79
- Hu, X.¹ Koudymov, A.² Simin, G.³ Yang, J.⁴ Asif Khan, M.⁵

7
- 0012749645
- M. P. Besland, S. Jourba, M. Lambrinos, P. Louis, P. Viktorovitch, and G. Hollinger, J. Appl. Phys. 80, 3100 (1996).
- (1996) J. Appl. Phys , vol.80 , pp. 3100
- Besland, M.P.¹ Jourba, S.² Lambrinos, M.³ Louis, P.⁴ Viktorovitch, P.⁵ Hollinger, G.⁶

8
- 0033434699
- M. Lapeyrade, M. P. Besland, C. Meva'a, A. Sibai, and G. Hollinger, J. Vac. Sci. Technol. A 17, 433 (1999).
- (1999) J. Vac. Sci. Technol A , vol.17 , pp. 433
- Lapeyrade, M.¹ Besland, M.P.² Meva'a, C.³ Sibai, A.⁴ Hollinger, G.⁵

9
- 0037380514
- Y. Cordier et al., J. Cryst. Growth 251, 811 (2003).
- (2003) J. Cryst. Growth , vol.251 , pp. 811
- Cordier, Y.¹

10
- 27344437637
- Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Ougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, and J.-P. Faurie, Physica Status Solidi C 2, 2195 (2005).
- (2005) Physica Status Solidi C , vol.2 , pp. 2195
- Cordier, Y.¹ Hugues, M.² Semond, F.³ Natali, F.⁴ Lorenzini, P.⁵ Ougrioua, Z.⁶ Massies, J.⁷ Frayssinet, E.⁸ Beaumont, B.⁹ Gibart, P.¹⁰ Faurie, J.-P.¹¹

11
- 0037370339
- J. R. Shealy, T. R. Prunty, E. M. Chumbes, and B. K. Ridley, J. Cryst. Growth 250, 7 (2003).
- (2003) J. Cryst. Growth , vol.250 , pp. 7
- Shealy, J.R.¹ Prunty, T.R.² Chumbes, E.M.³ Ridley, B.K.⁴

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