Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors

Japanese Journal of Applied Physics

Volumn 50, Issue 11 PART 1, 2011, Pages

  Huang, Sen ^a   Yang, Shu ^a   Roberts, John ^b   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DOUBLE-MODE; EMISSION PROCESS; FORWARD BIAS; HIGH FREQUENCY HF; INTERFACE STATE; LOW FREQUENCY; METAL-INSULATOR-SEMICONDUCTORS; MIS DIODES; QUASI-STATIC; SCHOTTKY DIODES; SCHOTTKY-GATE; TRANSFER CHARACTERISTICS; VOLTAGE INSTABILITY;

ALUMINUM; DIODES; ELECTRON MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); IODINE; METAL INSULATOR BOUNDARIES; MIS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; STABILITY; THRESHOLD VOLTAGE; TRANSISTORS; VANADIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80755126920     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.110202     Document Type: Article

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