Strained AlInN/GaN HEMTs on SiC with 2.1-A/mm output current and 104-GHz cutoff frequency

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 561-563

  Chabak, Kelson D ^a   Trejo, Manuel ^a   Crespo, Antonio ^a   Walker, Dennis E ^a,b   Yang, Jinwei ^c   Gaska, Remis ^c   Kossler, Mauricio ^a   Gillespie, James K ^a   Jessen, Gregg H ^a   Trimble, Virginia ^a   Via, Glen D ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Wyle Laboratories   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

Aluminum indium nitride; High electron mobility transistor (HEMT); Lattice strain; Polarization charge

Indexed keywords

100 GHZ; BARRIER THICKNESS; CURRENT GAINS; DEVICE PARAMETERS; FABRICATED DEVICE; GATE LENGTH; GATE PERIPHERY; INDIUM NITRIDE; LATTICE STRAIN; OUTPUT CURRENT; POLARIZATION CHARGES; SIC SUBSTRATES; SOURCE-DRAIN;

ALUMINUM; CUTOFF FREQUENCY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; INDIUM; NITRIDES; POLARIZATION; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953029028     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045099     Document Type: Article

References (18)

1. M. Higashiwaki and T. Matsui, "MBE growth and device characteristics of InAlN/GaN HFETs," Phys. Stat. Sol.(C), vol.2, no.7, pp. 2598-2601, May 2005.
2. A. Dadgar, M. Neuburger, F. Schulze, J. Blasing, A. Krtschil, I. Daumiller, M. Kunze, K.-M. Gunther, H. Witte, A. Diez, E. Kohn, and A. Krost, "High-current AlInN/GaN field effect transistors," Phys. Stat. Sol.(A), vol.202, no.5, pp. 832-836, Apr. 2005.
3. O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, "InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics," Electron. Lett., vol.40, no.20, pp. 1304-1305, Sep. 2004.
4. 1-xN-GaN high-electron mobility field-effect transistor," IEEE Trans. Electron Devices, vol.52, no.2, pp. 146-150, Feb. 2005.
5. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures," J. Appl. Phys., vol.87, no.1, pp. 334-344, Jan. 2000.
6. S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol.48, no.3, pp. 465-471, Mar. 2001.
7. J. Kuzmik, "Power electronics on InAlN/(In)GaN: Prospect for a record performance," IEEE Electron Device Lett., vol.22, no.11, pp. 510-512, Nov. 2001.
8. M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, N. Grandjean, V. Darakchieva, B. Monemar, M. Lorenz, and G. Ramm, "Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostruc-tures (0.03
9. N. Sarazin, E. Morvan, M. A. di Forte Poisson, M. Oualli, C. Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, and S. L. Delage, "AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz," IEEE Electron Device Lett., vol.31, no.1, pp. 11-13, Jan. 2010.
10. A. Crespo, M. M. Bellott, K. D. Chabak, J. K. Gillespie, G. H. Jessen, V. Miller, M. Trejo, G. D. Via, D. E. Walker, Jr., B. W. Winningham, H. E. Smith, T. A. Cooper, X. Gao, and S. Guo, "High-power Ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier," IEEE Electron Device Lett., vol.31, no.1, pp. 2-4, Jan. 2010.
11. S. Haifeng, A. R. Alt, H. Benedickter, C. R. Bolognesi, E. Feltin, J.-F. Carlin, M. Gonschorek, N. Grandjean, T. Maier, and R. Quay, "102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz," IEEE Electron Device Lett., vol.30, no.8, pp. 796-798, Aug. 2009.
12. O. I. Saadat, S. Guo, J. M. Tirado, T. Palacios, G. Xiang, and J. W Chung, "Gate-recessed InAlN/GaN HEMTs on SiC substrate with Al2O3 passivation," IEEE Electron Device Lett., vol.30, no.9, pp. 904-906, Sep. 2009.
13. M. Alomari, F. Medjdoub, J.-F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, C. Gaquiere, and E. Kohn, "InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess," IEEE Electron Device Lett., vol.30, no.11, pp. 1131-1133, Nov. 2009.
14. ,max, and 153 GHz ft," in Proc. IEEEDRC Conf. Dig., 2009, pp.167-168.
15. M. Higashiwaki, T. Mimura, and T. Matsui, "AlGaN/GaN heterostruc-ture field-effect transistors on 4H-SiC substrates with current-gain cutoff frequency of 190 GHz," Appl. Phys. Exp., vol.1, no.2, pp. 021103-1-021103-3, Feb. 2008.
16. G. H. Jessen, R. C. Fitch, J. K. Gillespie, G. Via, A. Crespo, D. Langley, D. J. Denninghoff, M. Trejo, and E. R. Heller, "Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices," IEEE Trans. Electron Devices, vol.54, no.10, pp. 2589-2597, Oct. 2007.
17. F. Medjdoub, D. Ducatteau, C. Gaquiere, J.-F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Gradjean, and E. Kohn, "Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature do mains," Electron. Lett., vol.43, no.5, pp. 71-72, Mar. 2007.
18. J. Kuzmik, J.-F. Carlin, M. Gonschorek, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo, S. Golka, A. Georgakilas, N. Gradjean, G. Strasser, and D. Pogany, "Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs," Phys. Stat. Sol.(A), vol.204, no.6, pp. 2019-2022, Jun. 2007.