GaN HEMT and MOS monolithic integration on silicon substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2210-2212

  Chyurlia, P ^a,b   Tang, H ^b   Semond, F ^c   Lester, T ^b   Bardwell, J A ^b   Rolfe, S ^b   Tarr, N G ^a  

^a CARLETON UNIVERSITY   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c CRHEA CNRS   (France)

Author keywords

Epitaxy; Gallium nitride; HEMT; HFET; Integration; MBE; MOS

Indexed keywords

ALGAN/GAN HFETS; FORWARD CURRENTS; GAN HEMTS; HFET; MONOLITHIC INTEGRATION; MOS; SILICON SUBSTRATES; THERMAL OXIDES;

DISPLAY DEVICES; EPITAXIAL GROWTH; GALLIUM NITRIDE; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING SILICON;

MOS DEVICES;

EID: 79960720053     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000914     Document Type: Article

References (9)

1. L.F. Eastman and U.K. Mishra, IEEE Spectrum, May 2002.
2. F. Semond and Y. Cordier, Phys. Status Solidi A 188, 501 (2001).
3. Y. Cordier, J.-C. Moreno, and F. Semond, IEEE Electron. Dev. Lett. 29, 1187 (2008).
4. P. Chyurlia, F. Semond, J.A. Bardwell, and N.G. Tarr, Electron. Lett. 46(3), 240 (2010).
5. J.W. Chung, J. Lee, E.L. Piner, and T. Palacios, IEEE Electron. Dev. Lett. 30(10), 1015 (2009).
6. P. Chyurlia, F. Semond, J.A. Bardwell, and N.G. Tarr, Phys. Status Solidi A 206(2), 371 (2009).
7. A.B. Joshi and D.-L. Kwong, IEEE Trans. Electron. Dev. 39(9), 2099 (1992).
8. S. Takagi, A. Toriumi, and H. Tango, IEEE Trans. Electron. Dev. 41(12), 2357 (1994).
9. K. Dora, A. Chakraborty, and U.K. Mishra, IEEE Electron. Dev. Lett. 27(9), 713 (2006).