Studies on electron beam evaporated ZrO 2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 2, 2005, Pages

  Balachander, Krishnan ^a,b   Arulkumaran, Subramaniam ^a   Ishikawa, Hiroyasu ^a   Baskar, Krishnan ^b   Egawa, Takashi ^a,b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b ANNA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD-ON VOLTAGES; GATE VOLTAGES; OPERATIONAL VOLTAGES;

CURRENT DENSITY; DIELECTRIC FILMS; ELECTRIC POTENTIAL; ELECTRON BEAMS; EVAPORATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

MOS DEVICES;

EID: 14944386044     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200409084     Document Type: Article

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