AlGaN-GaN HEMTs on patterned silicon (111) substrate

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 130-132

  Jia, Shou ^a   Dikme, Yilmaz ^b   Wang, Deliang ^a   Chen, Kevin J ^a   Lau, Kei May ^a   Heuken, Michael ^b,c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

(111) Silicon; AlGaN GaN; High electron mobility transistor (HEMT); Patterned substrate

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; HETEROJUNCTIONS; POLYIMIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

PATTERNED SUBSTRATE; POLYIMIDE PLANARIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 15544388533     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.842647     Document Type: Article

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