Digital oxide deposition of SiO 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Adivarahan, V ^a   Rai, S ^a   Tipirneni, N ^a   Koudymov, A ^a   Yang, J ^a   Simin, G ^a   Khan, M Asif ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATE PULSES; DIGITAL-OXIDE-DEPOSITION (DOD) TECHNIQUE; DRAIN BIAS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET);

DEPOSITION; GALLIUM NITRIDE; HETEROJUNCTIONS; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 33646536402     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2198508     Document Type: Article

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