Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 541-543

  Adivarahan, V ^a   Gaevski, M ^a   Sun, W H ^a   Fatima, H ^a   Koudymov, A ^a   Saygi, S ^a   Simin, G ^a   Yang, J ^a   Khan, M Afir ^a   Tarakji, A ^b   Shur, M S ^b   Gaska, R ^b  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

FETs; GaN; Microwave power FETs; MIS devices; MODFETs

Indexed keywords

ELECTRIC POTENTIAL; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

CUT-OFF FREQUENCY; DRAIN SATURATION CURRENT; ELECTRON VELOCITY; GATE INSULATOR; RADIO FREQUENCY POWER GAIN; SUBMICRON GATE TRANSISTORS;

MISFET DEVICES;

EID: 0141563623     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.816574     Document Type: Letter

References (8)

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