On the frequency dependence of the bias temperature instability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Grasser, T ^a   Kaczer, B ^b   Reisinger, H ^c   Wagner, P J ^a   Toledano Luque, M ^b  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b IMEC   (Belgium)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AC STRESS; BIAS TEMPERATURE INSTABILITY; DEFECT MODEL; FIRST ORDER REACTIONS; FREQUENCY DEPENDENCE; FREQUENCY-DEPENDENT COMPONENT; INTERMEDIATE STATE; LOW FREQUENCY; REACTION-DIFFUSION MODELS; TWO-STATE;

RELIABILITY;

DEFECTS;

EID: 84866622861     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241938     Document Type: Conference Paper

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