Interface trap generation induced by charge pumping current under dynamic oxide field stresses

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 216-218

  Zhu, Shiyang ^a   Nakajima, Anri ^a   Ohashi, Takuo ^b   Miyake, Hideharu ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

Charge pumping; Interface traps; MOSFET; Reliability

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

CHARGE PUMPING; DIRECT-CURRENT CURRENT-VOLTAGE; INTERFACE TRAPS;

MOSFET DEVICES;

EID: 15544372972     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.843783     Document Type: Article

References (12)

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