PBTI under dynamic stress: From a single defect point of view

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Zhao, K ^a   Stathis, J H ^a   Linder, B P ^a   Cartier, E ^a   Kerber, A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Bias Temperature Instability; duty cycle dependence; frequency dependence; HKMG; NBTI; PBTI; RTN; single defects

Indexed keywords

BIAS TEMPERATURE INSTABILITY; DUTY CYCLES; FREQUENCY DEPENDENCE; HKMG; NBTI; PBTI; RTN; SINGLE DEFECT;

DEFECTS; DYNAMICS; LOGIC GATES; MESFET DEVICES; MOS DEVICES; TELEGRAPH;

INTEGRATED CIRCUITS;

EID: 79959286252     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784502     Document Type: Conference Paper

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