Influence of nitrogen on negative bias temperature instability in ultrathin SiON

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 1, 2008, Pages 6-13

  Mitani, Yuichiro ^b   Satake, Hideki ^b   Toriumi, Akira ^a,c  

^a IEEE

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Hydrogen; Interface; Negative bias temperature instability (NBTI); Nitrogen; Oxynitride film; Reliability

Indexed keywords

HYDROGEN; NITRIDATION; PYROLYSIS; SILICON COMPOUNDS;

NEGATIVE BIAS TEMPERATURE; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); OXYNITRIDE FILM;

ULTRATHIN FILMS;

EID: 40549134555     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.917314     Document Type: Article

References (36)

1. K. O. Jeppson C. M. Svennson Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices J. Appl. Phys. 48 5 2004 May 1977
2. M. A. Alam A critical examination of the mechanics of dynamic NBTI for PMOSFETs IEDM Tech. Dig. 345 348 IEDM Tech. Dig. 2003
3. A. T. Krishnan V. Reddy S. Chakravarthi J. Rodriguez S. John S. Krishnan NBTI Impact on transistor & circuit: Models, mechanisms and scaling effects IEDM Tech. Dig. 349 352 IEDM Tech. Dig. 2003
4. B. Kaczer V. Arkhipov M. Jurczak G. Groeseneken Negative bias temperature instability (NBTI) in $\hbox{SiO}_{2}$ and SiON gate dielectrics understood through disorder-controlled kinetics Microelectron. Eng. 80 122 125 Jun. 2005
5. M. Denais A. Bravaix V. Huard C. Parthasarathy G. Ribes F. Perrier Y. Rey-Tauriac N. Revil On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFETs IEDM Tech. Dig. 109 112 IEDM Tech. Dig. 2004
6. H. Rreisinger O. Blank W. Heinrigs A. Muhlhoff W. Gustin C. Schlunder Analysis of NBTI degradation-and recovery-behavior based on ultra fast $V_{\rm th}$-measurements Proc. IEEE Int. Rel. Phys. Symp. 448 453 Proc. IEEE Int. Rel. Phys. Symp. 2006
7. T. Grasser W. Gos V. Sverdlov B. Kaczer The universality of NBTI relaxation and its implications for modeling and characterization Proc. IEEE Int. Rel. Phys. Symp. 268 280 Proc. IEEE Int. Rel. Phys. Symp. 2007
8. Y. Mitani H. Satake Experimental clarification of hydrogen-related mechanism in NBT degradation Proc. Int. Conf. Solid-State Devices Mater. 212 213 Proc. Int. Conf. Solid-State Devices Mater. 2004
9. D. S. Ang S. Wang C. H. Ling Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET IEEE Electron Device Lett. 26 12 906 908 Dec. 2005
10. V. Huard M. Denais Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors Proc. IEEE Int. Rel. Phys. Symp. 40 45 Proc. IEEE Int. Rel. Phys. Symp. 2004
11. S. Mahapatra K. Ahmed D. Varghese A. E. Islam G. Gupta L. Madhav D. Saha M. A. Alam On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy? Proc. IEEE Int. Rel. Phys. Symp. 1 9 Proc. IEEE Int. Rel. Phys. Symp. 2007
12. V. Huard M. Denais C. Parthasarathy NBTI degradation: From physical mechanisms to modelling Microelectron. Reliab. 46 1 1 23 Jan. 2006
13. J. P. Campbell P. M. Lenahan A. T. Krishnan S. Krishnan Location, structure, and density of states of NBTI-induced defects in plasma nitrided PMOSFETs Proc. IEEE Int. Rel. Phys. Symp. 503 510 Proc. IEEE Int. Rel. Phys. Symp. 2007
14. K. Kato Y. Nakasaki T. Uda Atomic processes of NO oxynitridation on Si(100) surfaces Phys. Rev. B, Condens. Matter 66 7 075308 2002
15. R. Fernndez B. Kaczer A. Nackaerts S. Demuynck R. Rodrguez M. Nafra G. Groeseneken AC NBTI studied in the 1 Hz–2 GHz range on dedicated on-chip CMOS circuits IEDM Tech. Dig. 1 4 IEDM Tech. Dig. 2006
16. S. Chakravarthi A. T. Krishnan V. Reddy C. F. Machala S. Krishnan A comprehensive framework for predictive modeling of negative bias temperature instability Proc. IEEE Int. Rel. Phys. Symp. 273 282 Proc. IEEE Int. Rel. Phys. Symp. 2004
17. S. Mahapatra M. A. Alam P. Bharath Kumar T. R. Dalei D. Saha Mechanism of negative bias temperature instability in CMOS devices: Degradation, recovery and impact of nitrogen IEDM Tech. Dig. 105 108 IEDM Tech. Dig. 2004
18. N. Kimizuka T. Yamamoto T. Mogami K. Yamaguchi K. Imai T. Horiuchi The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling VLSI Symp. Tech. Dig. 73 74 VLSI Symp. Tech. Dig. 1999
19. N. Kimizuka K. Yamaguchi K. Imai T. Iizuka C. T. Liu R. C. Keller T. Horiuchi NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-$ \mu\hbox{m}$ gate CMOS generation VLSI Symp. Tech. Dig. 92 93 VLSI Symp. Tech. Dig. 2000
20. G. La Rosa F. Guarin S. Rauch A. Acovic J. Lukaitis E. Crabbe NBTI-channel hot carrier effects in pMOSFETs in advanced CMOS technologies Proc. IEEE Int. Rel. Phys. Symp. 282 286 Proc. IEEE Int. Rel. Phys. Symp. 1997
21. K. Uwasawa T. Yamamoto T. Mogami A new degradation mode of scaled $\hbox{p}^{+}$ polysilicon gate pMOSFETs induced by bias temperature (BT) instability IEDM Tech. Dig. 871 874 IEDM Tech. Dig. 1995
22. T. Yamamoto K. Uwasawa T. Mogami Bias temperature instability in scaled $\hbox{p}^{+}$ polysilicon gate p-MOSFETs IEEE Trans. Electron Devices 46 5 921 926 May 1999
23. Y. Mitani M. Nagamine H. Satake A. Toriumi NBTI mechanism in ultra-thin gate dielectric—Nitrogen-originated mechanism in SiON IEDM Tech. Dig. 509 512 IEDM Tech. Dig. 2002
24. K. Imai A. Ono A 100 nm node CMOS technology for system-on-a-chip applications IEICE Trans. Electron. E85-C 5 1057 1063 2002
25. C. H. Liu H. S. Lin Y. Y. Lin M. G. Chen T. M. Pan C. J. Kao K. T. Huang S. H. Lin Y. C. Sheng W. T. Chang J. H. Lee M. Huang C. S. Hsiung S. H. Lu C. C. Hsu A. Y. Liang J. K. Chen Y. W. Hsieh P. W. Yen S. C. Chien Y. T. Loh Y. J. Chang F. T. Liou Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of $\hbox{N}_{2}\hbox{O}$-grown oxides and NO RTA treatment Proc. IEEE Int. Rel. Phys. Symp. 268 271 Proc. IEEE Int. Rel. Phys. Symp. 2002
26. K. Sakuma D. Matsushita K. Muraoka Y. Mitani Investigation of nitrogen-originated NBTI mechanisms in SiON with high-nitrogen concentration Proc. IEEE Int. Rel. Phys. Symp. 454 460 Proc. IEEE Int. Rel. Phys. Symp. 2006
27. S. Tsujikawa T. Mine K. Watanabe Y. Shimamoto R. Tsuchiya K. Ohnishi T. Onai J. Yugami S. Kimura Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics Proc. IEEE Int. Rel. Phys. Symp. 183 188 Proc. IEEE Int. Rel. Phys. Symp. 2003
28. S. S. Tan T. P. Chen C. H. Ang W. Y. Teo L. Chan New insights into dynamic negative bias temperature instability of pMOSFETs Proc. Int. Conf. Solid-State Devices Mater. 68 69 Proc. Int. Conf. Solid-State Devices Mater. 2003
29. D. Y. Lee H. C. Lin C. C. Chen C. H. Chien T. Y. Huang T. Wang T. L. Lee S. C. Chen M. S. Liang New mechanism for negative-bias-temperature instability and its impact on scaling of pMOSFETs Proc. Int. Conf. Solid-State Devices Mater. 18 19 Proc. Int. Conf. Solid-State Devices Mater. 2003
30. Y. Mitani M. Nagamine H. Satake A. Toriumi Enhancement of $V_{\rm TH}$ degradation under NBT stress due to hole capturing Proc. Int. Conf. Solid-State Devices Mater. 16 17 Proc. Int. Conf. Solid-State Devices Mater. 2003
31. S. Rangan N. Mielke E. C. Yeh Universal recovery behavior of negative bias temperature instability IEDM Tech. Dig. 341 344 IEDM Tech. Dig. 2003
32. G. Groeseneken H. E. Maes N. Beltran R. F. De Keersmaecker A reliable approach to charge-pumping measurements in MOS transistors IEEE Trans. Electron Devices ED-31 1 42 53 Jan. 1984
33. M. Denais A. Bravaix V. Huard C. Pathasarathy G. Ribes F. Perrier Y. Rey-Tauriac N. Revil On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFETs IEDM Tech. Dig. 109 112 IEDM Tech. Dig. 2004
34. T. Yang F. Li C. Shen C. H. Ang C. X. Zhu Y. C. Yeo G. Samudra S. C. Rustagi M. B. Yu D.-L. Kwong Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application VLSI Symp. Tech. Dig. 92 93 VLSI Symp. Tech. Dig. 2005
35. S. Mahapatra K. Ahmed D. Varghese A. E. Islam G. Gupta L. Madhav D. Saha M. A. Alam On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy Proc. IEEE Int. Rel. Phys. Symp. 1 9 Proc. IEEE Int. Rel. Phys. Symp. 2007
36. S. Mahapatra P. B. Kumar M. A. Alam A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFETs IEDM Tech. Dig. 337 340 IEDM Tech. Dig. 2003