메뉴 건너뛰기




Volumn , Issue , 2011, Pages

Understanding and modeling AC BTI

Author keywords

AC stress; NBTI; recovery

Indexed keywords

AC-STRESS; ALTERNATING STRESS; BORDER TRAPS; EMISSION TIME; EXPERIMENTAL DATA; NBTI; TECHNOLOGY PARAMETERS;

EID: 79959297027     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784542     Document Type: Conference Paper
Times cited : (88)

References (19)
  • 3
    • 77957892897 scopus 로고    scopus 로고
    • The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability
    • T. Grasser, H. Reisinger, P.-J. Wagner, F. Schanovsky, W. Goes, B. Kaczer, "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability", proc. IRPS 2010, pp. 26-32.
    • Proc. IRPS 2010 , pp. 26-32
    • Grasser, T.1    Reisinger, H.2    Wagner, P.-J.3    Schanovsky, F.4    Goes, W.5    Kaczer, B.6
  • 4
    • 77957888700 scopus 로고    scopus 로고
    • The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress
    • H. Reisinger, T. Grasser, W. Gustin, and C. Schluender, "The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress", Proc. IRPS 2010, pp. 7-15.
    • Proc. IRPS 2010 , pp. 7-15
    • Reisinger, H.1    Grasser, T.2    Gustin, W.3    Schluender, C.4
  • 5
    • 0842266651 scopus 로고    scopus 로고
    • A critical examination of the mechanics of dynamic NBTI for PMOSFETs
    • M. A. Alam, "A critical examination of the mechanics of dynamic NBTI for PMOSFETs", IEDM technical digest 2003, pp. 14.4.1-4.
    • (2003) IEDM Technical Digest
    • Alam, M.A.1
  • 6
    • 4444341905 scopus 로고    scopus 로고
    • Investigation and Modeling of Interface and Bulk Trap Generation during Negative Bias Temperature Instability of p-MOSFETs
    • S. Mahapatra P. B. Kumar, and M. A. Alam, "Investigation and Modeling of Interface and Bulk Trap Generation During Negative Bias Temperature Instability of p-MOSFETs", IEEE TED, Vol. 51, No. 9, pp.1371 1379 (2004).
    • (2004) IEEE TED , vol.51 , Issue.9 , pp. 13711379
    • Mahapatra, S.1    Kumar, P.B.2    Alam, M.A.3
  • 7
    • 28844506128 scopus 로고    scopus 로고
    • NBTI degradation: From physical mechanisms to modelling
    • V. Huard, M. Denais, and C. Parthasarathy, "NBTI degradation: From physical mechanisms to modelling", Microelectronics and Reliability, Vol. 46, No. 1, pp. 1-23 (2006).
    • (2006) Microelectronics and Reliability , vol.46 , Issue.1 , pp. 1-23
    • Huard, V.1    Denais, M.2    Parthasarathy, C.3
  • 10
    • 78651287908 scopus 로고    scopus 로고
    • Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
    • T. Grasser, H. Reisinger, P-J. Wagner and B. Kaczer, "Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors", Phys. Rev. B, Vol. 82, No. 24, pp. 5318 5327 (2010).
    • (2010) Phys. Rev. B , vol.82 , Issue.24 , pp. 53185327
    • Grasser, T.1    Reisinger, H.2    Wagner, P.-J.3    Kaczer, B.4
  • 12
    • 79952425634 scopus 로고    scopus 로고
    • 'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their Interactions
    • M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov, "'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their Interactions", 2010 IIRW final report, pp.76-79.
    • 2010 IIRW Final Report , pp. 76-79
    • Bukhori, M.F.1    Grasser, T.2    Kaczer, B.3    Reisinger, H.4    Asenov, A.5
  • 13
    • 77950298777 scopus 로고    scopus 로고
    • Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants
    • M. F. Bukhori, S. Roy, and A Asenov "Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants", IEEE TED Vol. 57, No. 4, pp. 795-803 (2010).
    • (2010) IEEE TED , vol.57 , Issue.4 , pp. 795-803
    • Bukhori, M.F.1    Roy, S.2    Asenov, A.3
  • 14
    • 77957919160 scopus 로고    scopus 로고
    • PBTI Relaxation Dynamics after AC vs. DC Stress in High-K/Metal Gate Stacks
    • K. Zhao, J. H. Stathis, A. Kerber and E. Cartier "PBTI Relaxation Dynamics after AC vs. DC Stress in High-K/Metal Gate Stacks" Proc. IRPS 2010, pp. 50-54.
    • Proc. IRPS 2010 , pp. 50-54
    • Zhao, K.1    Stathis, J.H.2    Kerber, A.3    Cartier, E.4
  • 15
    • 34547148329 scopus 로고    scopus 로고
    • A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models
    • H. Reisinger, O. Blank, W. Heinrigs, W. Gustin, and Ch. Schluender, "A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models", IEEE TDMR, Vol. 7, No. 1, pp. 119-129 (2007).
    • (2007) IEEE TDMR , vol.7 , Issue.1 , pp. 119-129
    • Reisinger, H.1    Blank, O.2    Heinrigs, W.3    Gustin, W.4    Schluender, Ch.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.