-
1
-
-
70449089008
-
NBTI from the perspective of defect states with widely distributed time scales
-
B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, G. Groeseneken, "NBTI from the perspective of defect states with widely distributed time scales", Proc. IRPS 2009, pp. 55-60.
-
Proc. IRPS 2009
, pp. 55-60
-
-
Kaczer, B.1
Grasser, T.2
Martin-Martinez, J.3
Simoen, E.4
Aoulaiche, M.5
Roussel, Ph.J.6
Groeseneken, G.7
-
2
-
-
77952357554
-
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
-
T. Grasser, H. Reisinger, W. Goes, T. Aichinger, P. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer; "Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise", IEDM technical digest 2009, pp. 729-732.
-
(2009)
IEDM Technical Digest
, pp. 729-732
-
-
Grasser, T.1
Reisinger, H.2
Goes, W.3
Aichinger, T.4
Hehenberger, P.5
Wagner, P.-J.6
Nelhiebel, M.7
Franco, J.8
Kaczer, B.9
-
3
-
-
77957892897
-
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability
-
T. Grasser, H. Reisinger, P.-J. Wagner, F. Schanovsky, W. Goes, B. Kaczer, "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability", proc. IRPS 2010, pp. 26-32.
-
Proc. IRPS 2010
, pp. 26-32
-
-
Grasser, T.1
Reisinger, H.2
Wagner, P.-J.3
Schanovsky, F.4
Goes, W.5
Kaczer, B.6
-
4
-
-
77957888700
-
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress
-
H. Reisinger, T. Grasser, W. Gustin, and C. Schluender, "The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress", Proc. IRPS 2010, pp. 7-15.
-
Proc. IRPS 2010
, pp. 7-15
-
-
Reisinger, H.1
Grasser, T.2
Gustin, W.3
Schluender, C.4
-
5
-
-
0842266651
-
A critical examination of the mechanics of dynamic NBTI for PMOSFETs
-
M. A. Alam, "A critical examination of the mechanics of dynamic NBTI for PMOSFETs", IEDM technical digest 2003, pp. 14.4.1-4.
-
(2003)
IEDM Technical Digest
-
-
Alam, M.A.1
-
6
-
-
4444341905
-
Investigation and Modeling of Interface and Bulk Trap Generation during Negative Bias Temperature Instability of p-MOSFETs
-
S. Mahapatra P. B. Kumar, and M. A. Alam, "Investigation and Modeling of Interface and Bulk Trap Generation During Negative Bias Temperature Instability of p-MOSFETs", IEEE TED, Vol. 51, No. 9, pp.1371 1379 (2004).
-
(2004)
IEEE TED
, vol.51
, Issue.9
, pp. 13711379
-
-
Mahapatra, S.1
Kumar, P.B.2
Alam, M.A.3
-
7
-
-
28844506128
-
NBTI degradation: From physical mechanisms to modelling
-
V. Huard, M. Denais, and C. Parthasarathy, "NBTI degradation: From physical mechanisms to modelling", Microelectronics and Reliability, Vol. 46, No. 1, pp. 1-23 (2006).
-
(2006)
Microelectronics and Reliability
, vol.46
, Issue.1
, pp. 1-23
-
-
Huard, V.1
Denais, M.2
Parthasarathy, C.3
-
8
-
-
77957860609
-
Highly accurate product-level aging monitoring in 40nm CMOS
-
K. Hofmann, H. Reisinger, K. Ermisch, C. Schluender, W. Gustin, T. Pompl, G. Georgakos, K. v. Arnim, J. Hatsch, T. Kodytek, T. Baumann, .C Pacha, "Highly accurate product-level aging monitoring in 40nm CMOS", Symp. on VLSI Techn. 2010, pp. 27-28.
-
Symp. on VLSI Techn. 2010
, pp. 27-28
-
-
Hofmann, K.1
Reisinger, H.2
Ermisch, K.3
Schluender, C.4
Gustin, W.5
Pompl, T.6
Georgakos, G.7
Arnim, K.V.8
Hatsch, J.9
Kodytek, T.10
Baumann, T.11
Pacha, C.12
-
9
-
-
79952428166
-
The impact of recovery on BTI reliability assessments
-
H. Reisinger, T. Grasser, K. Hofmann, W. Gustin and C. Schluender, "The impact of recovery on BTI reliability assessments", 2010 IIRW final report, pp. 12-16.
-
2010 IIRW Final Report
, pp. 12-16
-
-
Reisinger, H.1
Grasser, T.2
Hofmann, K.3
Gustin, W.4
Schluender, C.5
-
10
-
-
78651287908
-
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
-
T. Grasser, H. Reisinger, P-J. Wagner and B. Kaczer, "Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors", Phys. Rev. B, Vol. 82, No. 24, pp. 5318 5327 (2010).
-
(2010)
Phys. Rev. B
, vol.82
, Issue.24
, pp. 53185327
-
-
Grasser, T.1
Reisinger, H.2
Wagner, P.-J.3
Kaczer, B.4
-
11
-
-
77957904660
-
Origin of NBTI variability in deeply scaled pFETs
-
B. Kaczer, Ph. J. Roussel, J. Franco, R. Degraeve, L.-A. Ragnarsson, E. Simoen, G. Groeseneken, T. Grasser, H. Reisinger, "Origin of NBTI variability in deeply scaled pFETs", proc. IRPS 2010. pp. 26-32.
-
Proc. IRPS 2010
, pp. 26-32
-
-
Kaczer, B.1
Roussel, Ph.J.2
Franco, J.3
Degraeve, R.4
Ragnarsson, L.-A.5
Simoen, E.6
Groeseneken, G.7
Grasser, T.8
Reisinger, H.9
-
12
-
-
79952425634
-
'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their Interactions
-
M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov, "'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their Interactions", 2010 IIRW final report, pp.76-79.
-
2010 IIRW Final Report
, pp. 76-79
-
-
Bukhori, M.F.1
Grasser, T.2
Kaczer, B.3
Reisinger, H.4
Asenov, A.5
-
13
-
-
77950298777
-
Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants
-
M. F. Bukhori, S. Roy, and A Asenov "Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants", IEEE TED Vol. 57, No. 4, pp. 795-803 (2010).
-
(2010)
IEEE TED
, vol.57
, Issue.4
, pp. 795-803
-
-
Bukhori, M.F.1
Roy, S.2
Asenov, A.3
-
14
-
-
77957919160
-
PBTI Relaxation Dynamics after AC vs. DC Stress in High-K/Metal Gate Stacks
-
K. Zhao, J. H. Stathis, A. Kerber and E. Cartier "PBTI Relaxation Dynamics after AC vs. DC Stress in High-K/Metal Gate Stacks" Proc. IRPS 2010, pp. 50-54.
-
Proc. IRPS 2010
, pp. 50-54
-
-
Zhao, K.1
Stathis, J.H.2
Kerber, A.3
Cartier, E.4
-
15
-
-
34547148329
-
A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models
-
H. Reisinger, O. Blank, W. Heinrigs, W. Gustin, and Ch. Schluender, "A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trapping to existing physical models", IEEE TDMR, Vol. 7, No. 1, pp. 119-129 (2007).
-
(2007)
IEEE TDMR
, vol.7
, Issue.1
, pp. 119-129
-
-
Reisinger, H.1
Blank, O.2
Heinrigs, W.3
Gustin, W.4
Schluender, Ch.5
-
16
-
-
77957900250
-
An Extensive and Improved Circuit Simulation Methodology for NBTI Recovery
-
H. Kufluoglu, V. Reddy, A. Marshall, J. Krick, T. Ragheb, C. Cirba, A. Krishnan, C. Chancellor, "An Extensive and Improved Circuit Simulation Methodology For NBTI Recovery", proc. IRPS 2010, pp. 670-675.
-
Proc. IRPS 2010
, pp. 670-675
-
-
Kufluoglu, H.1
Reddy, V.2
Marshall, A.3
Krick, J.4
Ragheb, T.5
Cirba, C.6
Krishnan, A.7
Chancellor, C.8
-
17
-
-
46049120673
-
AC NBTI studied in the 1 Hz - 2 GHz range on dedicated on-chip CMOS circuits
-
R. Fernandez, B. Kaczer, A. Nackeaerts, R. Rodriguez, M. Nafria, G. Groeseneken, "AC NBTI studied in the 1 Hz - 2 GHz range on dedicated on-chip CMOS circuits", IEDM technical digest 2006, pp.337-340.
-
(2006)
IEDM Technical Digest
, pp. 337-340
-
-
Fernandez, R.1
Kaczer, B.2
Nackeaerts, A.3
Rodriguez, R.4
Nafria, M.5
Groeseneken, G.6
-
18
-
-
77955755032
-
A Theoretical Study of Negative Bias Temperature Instability in p-Type NEMFET
-
A. Jain, A. E. Islam, M. A. Alam, "A Theoretical Study of Negative Bias Temperature Instability in p-Type NEMFET", Proc. Micro/Nano Symposium (UGIM), 2010 , pp. 1-3.
-
Proc. Micro/Nano Symposium (UGIM), 2010
, pp. 1-3
-
-
Jain, A.1
Islam, A.E.2
Alam, M.A.3
|