Response of a single trap to AC negative bias temperature stress

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Toledano Luque, M ^a,b   Kaczer, B ^b   Roussel, Ph J ^b   Grasser, T ^c   Wirth, G I ^d   Franco, J ^b,e   Vrancken, C ^b   Horiguchi, N ^b   Groeseneken, G ^b,e  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b IMEC   (Belgium)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^d FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

AC stress; constant voltage stress; MOSFET; Negative Bias Temperature Instability; reliability; SiON; variability

Indexed keywords

AC STRESS; CONSTANT VOLTAGE STRESS; MOS-FET; NEGATIVE BIAS TEMPERATURE INSTABILITY; SION; VARIABILITY;

RELIABILITY;

INTEGRATED CIRCUITS;

EID: 79959299688     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784501     Document Type: Conference Paper

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