The 'permanent' component of NBTI: Composition and annealing

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Grasser, T ^a   Aichinger, Th ^b,c   Pobegen, G ^b   Reisinger, H ^d   Wagner, P J ^a   Franco, J ^e   Nelhiebel, M ^f   Kaczer, B ^e  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b KAI   (Austria)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e IMEC   (Belgium)

^f INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING CURRENT; CHARGE PUMPING MEASUREMENTS; DEFECT STATE; FAVORABLE CONDITIONS; RECOMBINATION-ENHANCED DEFECT REACTIONS; RECOVERY RATE; SWITCHING TRAPS; THRESHOLD VOLTAGE SHIFTS; TRANSITION RATES;

DEFECTS; ENHANCED RECOVERY; PUMPS; THRESHOLD VOLTAGE;

INTEGRATED CIRCUITS;

EID: 79959317103     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784543     Document Type: Conference Paper

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