PBTI relaxation dynamics after ac VS. DC stress in high-K/metal gate stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 50-54

  Zhao, K ^a   Stathis, J H ^a   Kerber, A ^b   Cartier, E ^a  

^a IBM RESEARCH   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DC STRESS; DE-TRAPPING; DUTY CYCLES; GATE STACKS; HIGHLY-CORRELATED; RELAXATION BEHAVIORS; RELAXATION DYNAMICS; RELAXATION EFFECT; STRESS MODES; STRESS TIME; TIME EVOLUTIONS; TRAP DISTRIBUTIONS; TRAP LEVELS; TRAPPING DYNAMICS;

DYNAMICS;

EID: 77957919160     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488855     Document Type: Conference Paper

References (8)

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4. R. Biswas, Y. P. Li, B. C. Pan, "Enhanced stability of deuterium in silicon" Applied Physics Letters, 1998, 72, pp. 3500-3503.
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6. T. Aichinger, M. Nelhiebel, T. Grasser, "Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changes," IRPS, 2009, pp. 2-7.
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8. S. Ramey, C. Prasad, M. Agostinelli, S. Pae, S. Walstra, S. Gupta, J. Hicks, "Frequency and recovery effects in High-k BTI degradation" IRPS, 2009, pp. 1023-1027.