Effect of nitrogen on the frequency dependence of dynamic NBTI-induced threshold-voltage shift of the ultrathin oxynitride gate P-MOSFET

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 483-486

  Wang, S ^a   Ang, Diing Shenp ^a   Du, G A ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Charge pumping (CP) current; Direct tunneling; Dynamic negative bias temperature instability (NBTI); Hole trap; Interface trap; Oxynitride; Plasma nitridation; Ultrathin gate dielectric

Indexed keywords

ELECTRON TUNNELING; GATE DIELECTRICS; HOLE TRAPS; NITRIDATION; THRESHOLD VOLTAGE;

CHARGE-PUMPING (CP) CURRENT; NEGATIVE-BIAS TEMPERATURE INSTABILITY; OXYNITRIDE; PLASMA NITRIDATION; ULTRATHIN GATE DIELECTRIC;

MOSFET DEVICES;

EID: 43549088090     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919793     Document Type: Article

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