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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 919-925

A comparison of Al2O3/HfO2 and Al 2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications

(4) Kim, Inhoe a Koo, Jaehyoung a Lee, Janghee a Jeon, Hyeongtag a

a Hanyang University (South Korea)

Author keywords

Al2O 3 ZrO2; Al2O3 HfO2; ALD; Bilayer; EOT; Gate oxide; Leakage current

Indexed keywords

ALUMINUM COMPOUNDS; BAND STRUCTURE; DEPOSITION; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; LEAKAGE CURRENTS;

AL2O 3/ZRO2; AL2O3/HFO2; ALD; BILAYER; EOT; GATE OXIDE;

THIN FILMS;

EID: 32244448616 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.919 Document Type: Article

Times cited : (14)

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