A novel thin Al2O3 gate dielectric by ECR-plasma oxidation of Al for AlGaN/GaN insulated gate heterostructure field-effect transistors

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 90-94

  Ootomo, S ^a   Hashizume, T ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM GALLIUM NITRIDE; ALUMINUM OXIDE; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; NITRIDES; TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN/GAN HETEROSTRUCTURES; FORMATION PROCESS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ORDERS OF MAGNITUDE; PLASMA OXIDATION; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; TWO-DIMENSIONAL ELECTRON GAS (2DEG); VACUUM ENVIRONMENT;

ALUMINUM;

EID: 84875087889     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390124     Document Type: Conference Paper

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