A model for multistep trap-assisted tunneling in thin high-k dielectrics

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Blank, O ^a   Reisinger, H ^a   Stengl, R ^a   Gutsche, M ^a   Wiest, F ^b   Capodieci, V ^b   Schulze, J ^b   Eisele, I ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAM; DYNAMIC RANDOM ACCESS MEMORY (DRAM); ELECTRON MASS; TRAP-ASSISTED TUNNELING (TAT);

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON TRAPS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; QUANTUM THEORY; RANDOM ACCESS STORAGE;

DIELECTRIC MATERIALS;

EID: 13744255330     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1849428     Document Type: Article

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