Electronic properties of GaN (0001) - Dielectric interfaces

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 1, 2004, Pages 107-125

  Cook Jr , T E ^a   Fulton, C C ^a   Mecouch, W J ^a   Davis, R F ^a   Lucovsky, G ^a   Nemanich, R J ^a  

^a North Carolina State University   (United States)

Author keywords

Dielectric interfaces; Electronic properties; GaN

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SURFACE PHENOMENA; TRANSPORT PROPERTIES; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CARRIER TRANSPORT; DIELECTRIC INTERFACES; GATE DIELECTRICS; SCHOTTKY-MOTT MODEL;

GALLIUM NITRIDE;

EID: 8444223154     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002260     Document Type: Article

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