SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 112, Issue 2, 2012, Pages

Generation of very fast states by nitridation of the SiO 2/SiC interface

(3) Yoshioka, Hironori a Nakamura, Takashi b Kimoto, Tsunenobu a

a KYOTO UNIVERSITY (Japan)

b ROHM CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE METHOD; CONDUCTION BAND EDGE; FAST STATE; INTERFACE STATE DENSITY; MAXIMUM FREQUENCY; NO ANNEALING; QUASI-STATIC; RESPONSE FREQUENCY; ROOM TEMPERATURE;

ANNEALING; FREQUENCY RESPONSE; SILICON CARBIDE;

INTERFACE STATES;

EID: 84865526797 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4740068 Document Type: Article

Times cited : (159)

References (36)

1
- 0001441489
- 10.1063/1.118773
- H. Li, S. Dimitrijev, H. B. Harrison, and D. Sweatman, Appl. Phys. Lett. 70, 2028 (1997). 10.1063/1.118773
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2028
- Li, H.¹ Dimitrijev, S.² Harrison, H.B.³ Sweatman, D.⁴

2
- 0035310635
- 10.1109/55.915604
- G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001). 10.1109/55.915604
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 176
- Chung, G.Y.¹ Tin, C.C.² Williams, J.R.³ McDonald, K.⁴ Chanana, R.K.⁵ Weller, R.A.⁶ Pantelides, S.T.⁷ Feldman, L.C.⁸ Holland, O.W.⁹ Das, M.K.¹⁰ Palmour, J.W.¹¹

3
- 79957959962
- 10.1063/1.1483125
- R. Schörner, P. Friedrichs, D. Peters, D. Stephani, S. Dimitrijev, and P. Jamet, Appl. Phys. Lett. 80, 4253 (2002). 10.1063/1.1483125
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4253
- Schörner, R.¹ Friedrichs, P.² Peters, D.³ Stephani, D.⁴ Dimitrijev, S.⁵ Jamet, P.⁶

4
- 0043028391
- 10.1109/TED.2003.814974
- C.-Y. Lu, J. A. Cooper, Jr., T. Tsuji, G. Chung, J. R. Wiliams, K. McDonald, and L. C. Feldman, IEEE Trans. Electron Devices 50, 1582 (2003). 10.1109/TED.2003.814974
- (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1582
- Lu, C.-Y.¹ Cooper Jr., J.A.² Tsuji, T.³ Chung, G.⁴ Wiliams, J.R.⁵ McDonald, K.⁶ Feldman, L.C.⁷

5
- 79951671993
- 10.1016/j.sse.2010.12.002
- X. Zhu, A. C. Ahyi, M. Li, Z. Chen, J. Rozen, L. C. Feldman, and J. R. Williams, Solid-State Electron. 57, 76 (2011). 10.1016/j.sse.2010.12.002
- (2011) Solid-State Electron. , vol.57 , pp. 76
- Zhu, X.¹ Ahyi, A.C.² Li, M.³ Chen, Z.⁴ Rozen, J.⁵ Feldman, L.C.⁶ Williams, J.R.⁷

6
- 18844420867
- 10.1016/j.sse.2004.10.016
- K. Fujihira, Y. Tarui, M. Imaizumi, K. Ohtsuka, T. Takami, T. Shiramizu, K. Kawase, J. Tanimura, and T. Ozeki, Solid-State Electron. 49, 896 (2005). 10.1016/j.sse.2004.10.016
- (2005) Solid-State Electron. , vol.49 , pp. 896
- Fujihira, K.¹ Tarui, Y.² Imaizumi, M.³ Ohtsuka, K.⁴ Takami, T.⁵ Shiramizu, T.⁶ Kawase, K.⁷ Tanimura, J.⁸ Ozeki, T.⁹

7
- 32844463750
- 10.1557/mrs2005.75
- S. Dhar, S. Wang, J. R. Williams, S. T. Pantelides, and L. C. Feldman, MRS Bull. 30, 288 (2005). 10.1557/mrs2005.75
- (2005) MRS Bull. , vol.30 , pp. 288
- Dhar, S.¹ Wang, S.² Williams, J.R.³ Pantelides, S.T.⁴ Feldman, L.C.⁵

8
- 70350037758
- 10.1002/pssa.200925247
- M. Noborio, J. Suda, S. Beljakowa, M. Krieger, and T. Kimoto, Phys. Status Solidi A 206, 2374 (2009). 10.1002/pssa.200925247
- (2009) Phys. Status Solidi A , vol.206 , pp. 2374
- Noborio, M.¹ Suda, J.² Beljakowa, S.³ Krieger, M.⁴ Kimoto, T.⁵

9
- 77749292486
- 10.1063/1.3290975
- A. Poggi, F. Moscatelli, S. Solmi, A. Armigliato, L. Belsito, and R. Nipoti, J. Appl. Phys. 107, 044506 (2010). 10.1063/1.3290975
- (2010) J. Appl. Phys. , vol.107 , pp. 044506
- Poggi, A.¹ Moscatelli, F.² Solmi, S.³ Armigliato, A.⁴ Belsito, L.⁵ Nipoti, R.⁶

10
- 0037348141
- 10.1063/1.1542935
- K. McDonald, R. A. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, and J. R. Williams, J. Appl. Phys. 93, 2719 (2003). 10.1063/1.1542935
- (2003) J. Appl. Phys. , vol.93 , pp. 2719
- McDonald, K.¹ Weller, R.A.² Pantelides, S.T.³ Feldman, L.C.⁴ Chung, G.Y.⁵ Tin, C.C.⁶ Williams, J.R.⁷

11
- 67650242358
- 10.1063/1.3131845
- J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams, and L. C. Feldman, J. Appl. Phys. 105, 124506 (2009). 10.1063/1.3131845
- (2009) J. Appl. Phys. , vol.105 , pp. 124506
- Rozen, J.¹ Dhar, S.² Zvanut, M.E.³ Williams, J.R.⁴ Feldman, L.C.⁵

12
- 19844374505
- 10.1143/JJAP.44.1213
- T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, and H. Matsunami, Jpn. J. Appl. Phys. 44, 1213 (2005). 10.1143/JJAP.44.1213
- (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 1213
- Kimoto, T.¹ Kanzaki, Y.² Noborio, M.³ Kawano, H.⁴ Matsunami, H.⁵

13
- 77954144905
- 10.1109/LED.2010.2047239
- D. Okamoto, H. Yano, K. Hirata, T. Hatayama, and T. Fuyuki, IEEE Electron Device Lett. 31, 710 (2010). 10.1109/LED.2010.2047239
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 710
- Okamoto, D.¹ Yano, H.² Hirata, K.³ Hatayama, T.⁴ Fuyuki, T.⁵

14
- 0036503281
- 10.1109/55.988816
- R. Kosugi, S. Suzuki, M. Okamoto, S. Harada, J. Senzaki, and K. Fukuda, IEEE Electron Device Lett. 23, 136 (2002). 10.1109/55.988816
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 136
- Kosugi, R.¹ Suzuki, S.² Okamoto, M.³ Harada, S.⁴ Senzaki, J.⁵ Fukuda, K.⁶

15
- 13444312074
- 10.1109/LED.2004.841191
- G. Gudjónsson, H. Ö. Ólafsson, F. Allerstam, P.-Å. Nilsson, E. Ö. Sveinbjörnsson, H. Zirath, T. Rödle, and R. Jos, IEEE Electron Device Lett. 26, 96 (2005). 10.1109/LED.2004.841191
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 96
- Gudjónsson, G.¹ Ólafsson, H.Ö.² Allerstam, F.³ Nilsson, P.-Å.⁴ Sveinbjörnsson, E.Ö.⁵ Zirath, H.⁶ Rödle, T.⁷ Jos, R.⁸

16
- 0031206903
- 10.1016/S0927-796X(97)00005-3
- H. Matsunami and T. Kimoto, Mater. Sci. Eng. R20, 125 (1997). 10.1016/S0927-796X(97)00005-3
- (1997) Mater. Sci. Eng. , vol.20 , pp. 125
- Matsunami, H.¹ Kimoto, T.²

17
- 0037442436
- 10.1063/1.1539541
- K. McDonald, L. C. Feldman, R. A. Weller, G. Y. Chung, C. C. Tin, and J. R. Williams, J. Appl. Phys. 93, 2257 (2003). 10.1063/1.1539541
- (2003) J. Appl. Phys. , vol.93 , pp. 2257
- McDonald, K.¹ Feldman, L.C.² Weller, R.A.³ Chung, G.Y.⁴ Tin, C.C.⁵ Williams, J.R.⁶

18
- 0037468012
- 10.1063/1.1532103
- V. V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Y. Cheong, and S. Dimitrijev, Appl. Phys. Lett. 82, 568 (2003). 10.1063/1.1532103
- (2003) Appl. Phys. Lett. , vol.82 , pp. 568
- Afanas'Ev, V.V.¹ Stesmans, A.² Ciobanu, F.³ Pensl, G.⁴ Cheong, K.Y.⁵ Dimitrijev, S.⁶

19
- 77955808802
- 10.1063/1.3457906
- I. Pintilie, C. M. Teodorescu, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, L. S. Lovlie, and B. G. Svensson, J. Appl. Phys. 108, 024503 (2010). 10.1063/1.3457906
- (2010) J. Appl. Phys. , vol.108 , pp. 024503
- Pintilie, I.¹ Teodorescu, C.M.² Moscatelli, F.³ Nipoti, R.⁴ Poggi, A.⁵ Solmi, S.⁶ Lovlie, L.S.⁷ Svensson, B.G.⁸

20
- 79953660118
- 10.1063/1.3552303
- A. F. Basile, J. Rozen, J. R. Williams, L. C. Feldman, and P. M. Mooney, J. Appl. Phys. 109, 064514 (2011). 10.1063/1.3552303
- (2011) J. Appl. Phys. , vol.109 , pp. 064514
- Basile, A.F.¹ Rozen, J.² Williams, J.R.³ Feldman, L.C.⁴ Mooney, P.M.⁵

21
- 36249000110
- 10.1109/TED.2007.906929
- V. Tilak, K. Matocha, and G. Dunne, IEEE Trans. Electron Devices 54, 2823 (2007). 10.1109/TED.2007.906929
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 2823
- Tilak, V.¹ Matocha, K.² Dunne, G.³

22
- 49249121196
- 10.1109/TED.2008.926674
- Y. Wang, K. Tang, T. Khan, M. K. Balasubramanian, H. Naik, W. Wang, and T. P. Chow, IEEE Trans. Electron Devices 55, 2046 (2008). 10.1109/TED.2008. 926674
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2046
- Wang, Y.¹ Tang, K.² Khan, T.³ Balasubramanian, M.K.⁴ Naik, H.⁵ Wang, W.⁶ Chow, T.P.⁷

23
- 77956839817
- 10.1063/1.3484043
- S. Dhar, S. Haney, L. Cheng, S.-R. Ryu, A. K. Agarwal, L. C. Yu, and K. P. Cheung, J. Appl. Phys. 108, 054509 (2010). 10.1063/1.3484043
- (2010) J. Appl. Phys. , vol.108 , pp. 054509
- Dhar, S.¹ Haney, S.² Cheng, L.³ Ryu, S.-R.⁴ Agarwal, A.K.⁵ Yu, L.C.⁶ Cheung, K.P.⁷

24
- 40849088251
- 10.1063/1.2898502
- S. Dhar, X. D. Chen, P. M. Mooney, J. R. Williams, and L. C. Feldman, Appl. Phys. Lett. 92, 102112 (2008). 10.1063/1.2898502
- (2008) Appl. Phys. Lett. , vol.92 , pp. 102112
- Dhar, S.¹ Chen, X.D.² Mooney, P.M.³ Williams, J.R.⁴ Feldman, L.C.⁵

25
- 84862933333
- 10.1063/1.3673572
- H. Yoshioka, T. Nakamura, and T. Kimoto, J. Appl. Phys. 111, 014502 (2012). 10.1063/1.3673572
- (2012) J. Appl. Phys. , vol.111 , pp. 014502
- Yoshioka, H.¹ Nakamura, T.² Kimoto, T.³

26
- 0004277486
- (Wiley, New York)
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

27
- 85056912674
- edited by D. M. Fleetwood, S. T. Pantelides, and R. D. Schrimpf, (CRC, Boca Raton), Cha
- Defects in Microelectronic Materials and Devices, edited by, D. M. Fleetwood, S. T. Pantelides, and, R. D. Schrimpf, (CRC, Boca Raton, 2009), Chap..
- (2009) Defects in Microelectronic Materials and Devices

28
- 30344447529
- 10.1016/j.mee.2005.10.026
- P. Zhao, Rusli, Y. Liu, C. C. Tin, W. G. Zhu, and J. Ahn, Microelectron. Eng. 83, 61 (2006). 10.1016/j.mee.2005.10.026
- (2006) Microelectron. Eng. , vol.83 , pp. 61
- Zhao, P.¹ Rusli² Liu, Y.³ Tin, C.C.⁴ Zhu, W.G.⁵ Ahn, J.⁶

29
- 36449001210
- 10.1063/1.112547
- E. Bano, T. Ouisse, L. D. Cioccio, and S. Karmann, Appl. Phys. Lett. 65, 2723 (1994). 10.1063/1.112547
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2723
- Bano, E.¹ Ouisse, T.² Cioccio, L.D.³ Karmann, S.⁴

30
- 21544482493
- 10.1063/1.352983
- W. Götz, A. Schöner, G. Pensl, W. Suttrop, W. J. Choyke, R. Stein, and S. Leibenzeder, J. Appl. Phys. 73, 3332 (1993). 10.1063/1.352983
- (1993) J. Appl. Phys. , vol.73 , pp. 3332
- Götz, W.¹ Schöner, A.² Pensl, G.³ Suttrop, W.⁴ Choyke, W.J.⁵ Stein, R.⁶ Leibenzeder, S.⁷

31
- 36449003792
- 10.1063/1.114800
- T. Kimoto, A. Itoh, H. Matsunami, S. Sridhara, L. L. Clemen, R. P. Devaty, W. J. Choyke, T. Dalibor, C. Peppermüller, and G. Pensl, Appl. Phys. Lett. 67, 2833 (1995). 10.1063/1.114800
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2833
- Kimoto, T.¹ Itoh, A.² Matsunami, H.³ Sridhara, S.⁴ Clemen, L.L.⁵ Devaty, R.P.⁶ Choyke, W.J.⁷ Dalibor, T.⁸ Peppermüller, C.⁹ Pensl, G.¹⁰

32
- 0000810016
- 10.1063/1.125737
- V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, and M. J. Schulz, Appl. Phys. Lett. 76, 336 (2000). 10.1063/1.125737
- (2000) Appl. Phys. Lett. , vol.76 , pp. 336
- Afanas'Ev, V.V.¹ Stesmans, A.² Bassler, M.³ Pensl, G.⁴ Schulz, M.J.⁵

33
- 13644283977
- 10.1016/j.sse.2004.12.006
- T. E. Rudenko, I. N. Osiyuk, I. P. Tyagulski, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson, Solid-State Electron. 49, 545 (2005). 10.1016/j.sse.2004.12.006
- (2005) Solid-State Electron. , vol.49 , pp. 545
- Rudenko, T.E.¹ Osiyuk, I.N.² Tyagulski, I.P.³ Ólafsson, H.Ö.⁴ Sveinbjörnsson, E.Ö.⁵

34
- 80053990362
- 10.1063/1.3644156
- T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, T. Ohshima, N. Morishita, and J. Isoya, Appl. Phys. Lett. 99, 142105 (2011). 10.1063/1.3644156
- (2011) Appl. Phys. Lett. , vol.99 , pp. 142105
- Umeda, T.¹ Esaki, K.² Kosugi, R.³ Fukuda, K.⁴ Ohshima, T.⁵ Morishita, N.⁶ Isoya, J.⁷

35
- 0000166879
- 10.1016/0038-1101(66)90137-7
- L. J. Kroko and A. G. Milnes, Solid-State Electron. 9, 1125 (1966). 10.1016/0038-1101(66)90137-7
- (1966) Solid-State Electron. , vol.9 , pp. 1125
- Kroko, L.J.¹ Milnes, A.G.²

36
- 0033078987
- 10.1007/s11664-999-0227-3
- P. Tanner, S. Dimitrijev, H.-F. Li, D. Sweatman, K. E. Prince, and H. B. Harrison, J. Electron. Mater. 28, 109 (1999). 10.1007/s11664-999-0227-3
- (1999) J. Electron. Mater. , vol.28 , pp. 109
- Tanner, P.¹ Dimitrijev, S.² Li, H.-F.³ Sweatman, D.⁴ Prince, K.E.⁵ Harrison, H.B.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.