The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices

Solid-State Electronics

Volumn 57, Issue 1, 2011, Pages 76-79

  Zhu, Xingguang ^a   Ahyi, Ayayi C ^b   Li, Mingyu ^b   Chen, Zengjun ^b   Rozen, John ^c   Feldman, Leonard C ^a,c   Williams, John R ^b  

^a RUTGERS UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

Channel mobility; Interface trap density; Oxide interface; Plasma nitridation; Silicon carbide

Indexed keywords

AS ANNEALING; BREAKDOWN CHARACTERISTICS; CHANNEL MOBILITY; DELETERIOUS EFFECTS; DETRIMENTAL EFFECTS; INTERFACE TRAP DENSITY; NITRIDATION PROCESS; NITROGEN CONTENT; OXIDE INTERFACE; PLASMA NITRIDATION; PLASMA PROCESS;

MOS DEVICES; NITRIDATION; NITROGEN; NITROGEN PLASMA; SILICON CARBIDE;

PHASE INTERFACES;

EID: 79951671993     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.12.002     Document Type: Article

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