Analysis of electron traps at the 4H-SiC/SiO2 interface; Influence by nitrogen implantation prior to wet oxidation

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Pintilie, I ^a   Teodorescu, C M ^a   Moscatelli, F ^b   Nipoti, R ^b   Poggi, A ^b   Solmi, S ^b   Lovlie L S ^c   Svensson, B G ^c  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b CNR   (Italy)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CHARACTERISTIC; C-V CURVE; CAPACITANCE VOLTAGE MEASUREMENTS; CAPACITOR STRUCTURES; CONDUCTION BAND EDGE; DEFECT CENTERS; ELECTRON STATE; ENERGY DISTRIBUTIONS; EXCESS NITROGEN; FREQUENCY DEPENDENCE; IMPLANTED SAMPLES; INTERFACE STATE; INTERFACIAL CONCENTRATIONS; NITROGEN IMPLANTATION; ORDERS OF MAGNITUDE; PROBE FREQUENCY; QUANTITATIVE AGREEMENT; TEMPERATURE RANGE; WET OXIDATION;

ELECTRON MOBILITY; ION IMPLANTATION; NITROGEN; SILICON CARBIDE;

ELECTRONS;

EID: 77955808802     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457906     Document Type: Article

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