Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2823-2829

  Tilak, Vinayak ^a   Matocha, Kevin ^a   Dunne, Greg ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Coulomb scattering; Hall effect; MOS devices; Silicon carbide; Surface roughness scattering

Indexed keywords

ELECTRIC FIELDS; ELECTRON SCATTERING; IONIZATION; MOS DEVICES; SILICON CARBIDE; STATISTICS; SURFACE ROUGHNESS; TEMPERATURE;

COULOMB SCATTERING; FERMI-DIRAC STATISTICS; HALL-EFFECT MEASUREMENTS; SURFACE-ROUGHNESS SCATTERING;

MOSFET DEVICES;

EID: 36249000110     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.906929     Document Type: Article

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