Accurate evaluation of interface state density in SiC metal-oxide- semiconductor structures using surface potential based on depletion capacitance

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Yoshioka, Hironori ^a   Nakamura, Takashi ^b   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY LEVEL; FAST STATE; FLAT BAND; FREQUENCY DEPENDENCE; HIGH FREQUENCY MEASUREMENTS; INTERFACE STATE; INTERFACE STATE DENSITY; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; QUASI-STATIC; SEMICONDUCTOR STRUCTURE; SPECIFIC ENERGY; SURFACE POTENTIAL-BASED;

CAPACITANCE; DIELECTRIC DEVICES; SILICON CARBIDE; SURFACE POTENTIAL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84862933333     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3673572     Document Type: Article

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