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Volumn 28, Issue 2, 1999, Pages 109-111
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SIMS Analysis of Nitrided Oxides Grown on 4H-SiC
a a a a b a |
Author keywords
4H SiC; Nitrided oxide (NO); Secondary ion mass spectroscopy (SIMS) analysis
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Indexed keywords
NITRIC OXIDE;
ANNEALING;
ATOMIC FORCE MICROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SILICON CARBIDE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0033078987
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-999-0227-3 Document Type: Article |
Times cited : (31)
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References (13)
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