Characteristics of 4H-SiC MOS interface annealed in N2O

Solid-State Electronics

Volumn 49, Issue 6, 2005, Pages 896-901

  Fujihira, Keiko ^a   Tarui, Yoichiro ^a   Imaizumi, Masayuki ^a   Ohtsuka, Ken Ichi ^a   Takami, Tetsuya ^a   Shiramizu, Tatsuya ^a   Kawase, Kazumasa ^a   Tanimura, Jyunji ^a   Ozeki, Tatsuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Channel mobility; Interface state density; MOSFET; Nitridation; Oxidation; Silicon carbide

Indexed keywords

ANNEALING; ELECTRIC FIELDS; HYDROGEN; INTERFACES (MATERIALS); NITROGEN OXIDES; OXIDATION; SILICA; SILICON CARBIDE; THERMAL CONDUCTIVITY;

CHANNEL MODILITY; INTERFACE STATE DENSITY; NITRIDATION; THERMAL OXIDATION;

MOSFET DEVICES;

EID: 18844420867     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.10.016     Document Type: Article

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