SCOPUS 정보 검색 플랫폼

Volumn 355, Issue 1, 2012, Pages 63-72

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

(4) Lee, S R a Koleske, D D a Crawford, M H a Wierer Jr , J J a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

A1. Interface structure and roughness; A1. X ray diffraction; A3. Quantum wells; A3. Superlattices; B2. Semiconducting III nitrides

Indexed keywords

AS-GROWN; BASAL PLANES; CARRIER LOCALIZATION; COMBINED EFFECT; CONVENTIONAL MODELS; GOODNESS OF FIT; HETERO INTERFACES; HIGH DYNAMIC RANGE; III-NITRIDES; INGAN/GAN; INTERFACE STRUCTURE AND ROUGHNESS; LATERAL VARIATIONS; LAYER THICKNESS; STRUCTURAL FEATURE; THICKNESS VARIATION; XRD MEASUREMENTS;

ATOMIC FORCE MICROSCOPY; EXPERIMENTS; GALLIUM NITRIDE; GRADING; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84864054047 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.06.048 Document Type: Article

Times cited : (17)

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