Investigations on structural properties of GaInN-GaN multi quantum well structures

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 315-320

  Scholz, F ^a   Off, J ^a   Fehrenbacher, E ^a   Gfrorer O ^a   Brockt, G ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

MULTIQUANTUM WELL STRUCTURES; STRUCTURAL PROPERTIES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0034226147     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<315::AID-PSSA315>3.0.CO;2-2     Document Type: Article

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