SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 6, 2008, Pages 675-681

High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems

(3) Oliver, R A a Galtrey, M J a Humphreys, C J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

Gallium nitride; Localisation; Quantum wells; Three dimensional atom probe; Transmission electron microscopy

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; THREE DIMENSIONAL;

CHEMICAL MAPPING; COMPLEMENTARY TECHNIQUES; GAN BASED LIGHT EMITTING DIODES; HIGH RESOLUTIONS; HIGH-SPATIAL-RESOLUTION; QUANTUM WELL SYSTEMS; THREE DIMENSIONAL ATOM PROBE (3 DAP);

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 47549112898 PISSN: 02670836 EISSN: None Source Type: Journal
DOI: 10.1179/174328408X270301 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.