-
1
-
-
0029632464
-
Selectively oxidized vertical cavity surface emitting lasers with 50 percent power conversion efficiency
-
Feb
-
K.L. Lear, K.D. Choquette, R.P. Schneider, S.P. Kilcoyne, and K.M. Geib, "Selectively oxidized vertical-cavity surface-emitting lasers with 50-percent power conversion efficiency," Electron. Lett., vol. 31, pp. 208-209, Feb. 1995.
-
(1995)
Electron Lett.
, vol.31
, pp. 208-209
-
-
Lear, K.L.1
Choquette, K.D.2
Schneider, R.P.3
Kilcoyne, S.P.4
Geib, K.M.5
-
2
-
-
0001041732
-
8 W continuous wave front facet power from broad waveguide Al free 980 nm diode lasers
-
Sept
-
L.J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D.Z. Garbuzov, L. Demarco, J.C. Connolly, M. Jansen, F. Fang, and R.F. Nabiev, "8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers," Appl. Phys. Lett., vol. 69, pp. 1532-1534, Sept. 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 1532-1534
-
-
Mawst, L.J.1
Lopez, J.2
Bhattacharya, A.3
Botez, D.4
Garbuzov, D.Z.5
Demarco, L.6
Connolly, J.C.7
Jansen, M.8
Fang, F.9
Nabiev, R.F.10
-
3
-
-
0043080206
-
High power truncated inverted pyramid AlxGal x 0.5 in 0.5 P GaP light emitting diodes exhibiting > 50% external quantum efficiency
-
M. Krames, M. Ochiai-Holcomb, G. Hofler, C. Carter-Coman, E. Chen, I. Tan, P. Grillot, N. Gardner, H. Chui, J. Huang, S. Stockman, F. Kish, M. Craford, T. Tan, C. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, "High-power truncated-inverted-pyramid (AlxGal-x (0.5) in 0.5 P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency," Appl. Phys. Lett., vol. 75, pp. 2365-2367, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 2365-2367
-
-
Krames, M.1
Ochiai-Holcomb, M.2
Hofler, G.3
Carter-Coman, C.4
Chen, E.5
Tan, I.6
Grillot, P.7
Gardner, N.8
Chui, H.9
Huang, J.10
Stockman, S.11
Kish, F.12
Craford, M.13
Tan, T.14
Kocot, C.15
Hueschen, M.16
Posselt, J.17
Loh, B.18
Sasser, G.19
Collins, D.20
more..
-
4
-
-
26144450034
-
The US LEDs for general illumination roadmap
-
May
-
J.Y. Tsao, "The U.S. LEDs for general illumination roadmap," Laser Focus World, pp. S11-S14, May 2003.
-
(2003)
Laser Focus World
-
-
Tsao, J.Y.1
-
5
-
-
0035577028
-
The promise challenge of solid state lighting
-
Dec
-
A. Bergh, M.G. Craford, A. Duggal, and R. Haitz, "The promise and challenge of solid-state lighting," Phys. Today, vol. 54, pp. 42-47, Dec. 2001.
-
(2001)
Phys. Today
, vol.54
, pp. 42-47
-
-
Bergh, A.1
Craford, M.G.2
Duggal, A.3
Haitz, R.4
-
6
-
-
0027577002
-
Blue LEDs UV photodiodes high temperature rectifiers in 6H SiC
-
J. Edmond, H. Kong, and C. Carter, "Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC," Physica B: 7th Trieste ICTP-IUPAP Semiconductor Symp., vol. 185, pp. 453-460, 1993.
-
(1993)
Physica B: 7th Trieste ICTP IUPAP Semiconductor Symp.
, vol.185
, pp. 453-460
-
-
Edmond, J.1
Kong, H.2
Carter, C.3
-
7
-
-
0040766267
-
High efficiency ZnCdSe ZnSSe ZnMgSSe green light emitting diodes
-
N. Nakayama, S. Kijima, S. Itoh, T. Ohata, A. Ishibashi, and Y. Mori, "High-efficiency ZnCdSe/ZnSSe/ZnMgSSe green light-emitting-diodes," Opt. Rev., vol. 2, pp. 167-170, 1995.
-
(1995)
Opt. Rev.
, vol.2
, pp. 167-170
-
-
Nakayama, N.1
Kijima, S.2
Itoh, S.3
Ohata, S.T.4
Ishibashi, A.5
Mori, Y.6
-
8
-
-
0003975177
-
-
Washington DC Optoelectronics Industry Development Association Oct
-
R. Haitz, F. Kish, J. Tsao, and J. Nelson, The Case for a National Research Program on Semiconductor Lighting. Washington, DC: Optoelectronics Industry Development Association, Oct. 1999.
-
(1999)
The Case for a National Research Program on Semiconductor Lighting
-
-
Haitz, R.1
Kish, F.2
Tsao, J.3
Nelson, J.4
-
9
-
-
0002060662
-
Do real output real wage measures capture reality? The history of lighting suggests not
-
TF Breshnahan RJ Gordon Eds Chicago IL Univ of Chicago Press
-
W.D. Nordhaus, "Do real-output and real-wage measures capture reality? The history of lighting suggests not," in The Economics of New Goods, T.F. Breshnahan and R.J. Gordon, Eds. Chicago, IL: Univ. of Chicago Press, 1997, pp. 29-70.
-
(1997)
The Economics of New Goods
, pp. 29-70
-
-
Nordhaus, W.D.1
-
11
-
-
3142687645
-
High brightness LEDs
-
Jan Feb
-
R. Dixon, "High brightness LEDs," Compound Semiconductor Mag., vol. 6, no. 1, p. 70, Jan./Feb. 2000.
-
(2000)
Compound Semiconductor Mag.
, vol.6
, Issue.1
, pp. 70
-
-
Dixon, R.1
-
12
-
-
0034217329
-
High brightness semiconductor laser sources for materials processing Stacking beam shaping bars
-
Jul Aug
-
H.G. Treusch, A. Ovtchinnikov, X. He, M. Kanskar, J. Mott, and S. Yang, "High-brightness semiconductor laser sources for materials processing: Stacking; beam shaping; and bars," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 601-614, Jul./Aug. 2000.
-
(2000)
IEEE J. Select Topics Quantum Electron
, vol.6
, pp. 601-614
-
-
Treusch, H.G.1
Ovtchinnikov, A.2
He, X.3
Kanskar, M.4
Mott, J.5
Yang, S.6
-
13
-
-
3142768453
-
Lasers light sources High power diode lasers
-
Jan
-
D. Wolft, "Lasers and light sources: High-power diode lasers," Photonics Spectra, Jan. 2000.
-
(2000)
Photonics Spectra
-
-
Wolft, D.1
-
14
-
-
3142705202
-
New survey shows foundry pricing paid by fabless chip companies
-
May 14 Online Available
-
(2001, May 14). "New survey shows foundry pricing paid by fabless chip companies," EE Times [Online]. Available: http://www.eetimes.com/story/OEG20010514S0103
-
(2001)
EE Times
-
-
-
15
-
-
3142772814
-
-
Jun Private Communication Unpublished Analysis of SSL 2020 Cost Targets
-
J.M. Gee, private communication, unpublished analysis of SSL 2020 cost targets, Jun. 2001.
-
(2001)
-
-
Gee, J.M.1
-
17
-
-
0001041732
-
8 W continuous wave front facet power from broad waveguide Al-free 980 nm diode lasers
-
Sept
-
L.J. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D.Z. Garbuzov, L. Demarco, J.C. Connolly, M. Jansen, F. Fang, and R.F. Nabiev, "8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers," Appl. Phys. Lett., vol. 69, pp. 1532-1534, Sept. 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 1532-1534
-
-
Mawst, L.J.1
Bhattacharya, A.2
Lopez, J.3
Botez, D.4
Garbuzov, D.Z.5
Demarco, L.6
Connolly J.C7
Jansen, F.8
Fang, F.9
Nabiev R.F10
-
18
-
-
0033124039
-
High power VCSELs Single devices densely packed 2 D arrays
-
May June
-
M. Grabherr, M. Miller, R. Jager, R. Michalzik, U. Martin, H.J. Unold, and K.J. Ebeling, "High-power VCSELs: Single devices and densely packed 2-D arrays," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 495-502, May/June 1999.
-
(1999)
IEEE J. Select Topics Quantum Electron
, vol.5
, pp. 495-502
-
-
Grabherr, M.1
Miller, M.2
Jager, R.3
Michalzik, R.4
Martin, U.5
Unold, H.J.6
Ebeling, K.J.7
-
19
-
-
0029637531
-
High dislocation densities in high efficiency GaN based light emitting diodes
-
Mar
-
S.D. Lester, F.A. Ponce, M.G. Craford, and D.A. Steigerwald, "High dislocation densities in high-efficiency GaN-based light-emitting diodes," Appl. Phys. Lett., vol. 66, p. 1249, Mar. 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 1249
-
-
Lester, S.D.1
Ponce, F.A.2
Craford, M.G.3
Steigerwald, D.A.4
-
20
-
-
0038269509
-
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
-
Jan
-
S.J. Rosner, E.C. Carr, M.J. Ludowise, G. Girolami, and H.I. Erikson, "Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition," Appl. Phys. Lett., vol. 70, pp. 420-422, Jan. 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 420-422
-
-
Rosner, S.J.1
Carr, E.C.2
Ludowise, M.J.3
Girolami, G.4
Erikson, H.I.5
-
21
-
-
0033344436
-
The role of threading dislocations in the physical properties of gan its alloys
-
Dec
-
J.S. Speck and S.J. Rosner, "The role of threading dislocations in the physical properties of gan and its alloys," Physica B, vol. 274, pp. 24-32, Dec. 1999.
-
(1999)
Physica B
, vol.274
, pp. 24-32
-
-
Speck, J.S.1
Rosner, S.J.2
-
22
-
-
0037662215
-
Photoluminescence intensity of GaN films with widely varying dislocation density
-
Y. Sun, O. Brandt, and K. Ploog, "Photoluminescence intensity of GaN films with widely varying dislocation density," J. Mater. Res., vol. 18, pp. 1247-1250, 2003.
-
(2003)
J. Mater. Res.
, vol.18
, pp. 1247-1250
-
-
Sun, Y.1
Brandt, O.2
Ploog, K.3
-
23
-
-
0001398889
-
Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor
-
Sept 1
-
C. Donolato, "Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor," J. Appl. Phys., vol. 84, pp. 2656-2664, Sept. 1, 1998.
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 2656-2664
-
-
Donolato, C.1
-
24
-
-
0018454480
-
Effect of dislocations in Gal -xAlxAs- Si light emitting diodes
-
R.J. Roedel, A.R. Vonneida, R. Caruso, and L.R. Dawson, "Effect of dislocations in Gal-xAlxAs-Si light emitting diodes," J. Electrochem. Soc., vol. 126, pp. 637-641, 1979.
-
(1979)
J. Electrochem. Soc.
, vol.126
, pp. 637-641
-
-
Roedel, R.J.1
Vonneida, A.R.2
Caruso, R.3
Dawson, L.R.4
-
25
-
-
0037449316
-
Dislocation effect on light emission efficiency in Gallium Nitride
-
Dec
-
S.Y. Karpov and Y.N. Makarov, "Dislocation effect on light emission efficiency in Gallium Nitride," Appl. Phys. Lett., vol. 81, pp. 4721-4723, Dec. 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 4721-4723
-
-
Karpov, S.Y.1
Makarov, Y.N.2
-
26
-
-
0035402590
-
Luminescence spectra efficiency of GaN based quantum well heterostructure light emitting diodes Current voltage dependence
-
V.E. Kudryashov, S.S. Mamakin, A.N. Turkin, A.E. Yunovich, A.N. Kovalev, and F.I. Manyakhin, "Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence," Semiconductors, vol. 35, pp. 827-834, 2001.
-
(2001)
Semiconductors
, vol.35
, pp. 827-834
-
-
Kudryashov, V.E.1
Mamakin, S.S.2
Turkin, A.N.3
Yunovich, A.E.4
Kovalev, A.N.5
Manyakhin, F.I.6
-
27
-
-
0035855050
-
Nitride light emitting diodes
-
Aug
-
T. Mukai, S. Nagahama, N. Iwasa, M. Senoh, and T. Yamada, "Nitride light-emitting diodes," J. Phys. Condens. Matter, vol. 13, pp. 7089-7098, Aug. 2001.
-
(2001)
J. Phys. Condens. Matter
, vol.13
, pp. 7089-7098
-
-
Mukai, T.1
Nagahama, S.2
Iwasa, N.3
Senoh, M.4
Yamada, T.5
-
28
-
-
79955993717
-
Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
-
D. Koleske, A. Fischer, A. Allerman, C. Mitchell, K. Cross, S. Kurtz, J. Figiel, K. Fullmer, and W. Breiland, "Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence," Appl. Phys. Lett., vol. 81, pp. 1940-1942, 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 1940-1942
-
-
Koleske, D.1
Fischer, A.2
Allerman, A.3
Mitchell, C.4
Cross, K.5
Kurtz, S.6
Figiel, J.7
Fullmer, K.8
Breiland, W.9
-
29
-
-
0001466566
-
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
-
O. Nam, M. Bremser, T. Zheleve, and R. Davis, "Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy," App. Phys. Lett., vol. 71, pp. 2638-2640, 1997.
-
(1997)
App. Phys. Lett.
, vol.71
, pp. 2638-2640
-
-
Nam, O.1
Bremser, M.2
Zheleve, T.3
Davis, R.4
-
30
-
-
0001236278
-
Low dislocation density GaN from a single growth on a textured substrate
-
C. Ashby, C. Mitchell, J. Han, N. Missert, P. Provencio, D. Follstaedt, G. Peake, and L. Griego, "Low-dislocation-density GaN from a single growth on a textured substrate," Appl. Phys. Lett., vol. 77, pp. 3233-3235, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 3233-3235
-
-
Ashby, C.1
Mitchell, C.2
Han, J.3
Missert, N.4
Provencio, P.5
Follstaedt, D.6
Peake, G.7
Griego, L.8
-
31
-
-
0026264187
-
Diode laser degradation mechanisms: A review
-
R.G. Waters, "Diode-laser degradation mechanisms: A review," Prog. Quantum Electron., vol. 15, pp. 153-174, 1991.
-
(1991)
Prog. Quantum Electron
, vol.15
, pp. 153-174
-
-
Waters, R.G.1
-
32
-
-
0003610689
-
Dislocation motion in GaN light emitting devices its effects on device lifetime
-
Feb
-
L. Sugiura, "Dislocation motion in GaN light-emitting devices and its effects on device lifetime," J. Appl. Phys., vol. 81, pp. 1633-1638, Feb. 1997.
-
(1997)
J. Appl. Phys.
, vol.81
, pp. 1633-1638
-
-
Sugiura, L.1
-
33
-
-
0033871230
-
Changes in electrical characteristics associated with degradation of inGaN blue light emitting diodes
-
Z. Fang, D. Reyonds, and D. Look, "Changes in electrical characteristics associated with degradation of inGaN blue light-emitting diodes," J. Electron. Mater., vol. 29, pp. 448-45, 2000.
-
(2000)
J. Electron Mater
, vol.29
, pp. 445-448
-
-
Fang, Z.1
Reyonds, D.2
Look, D.3
-
34
-
-
0000075750
-
Characteristics of InGaN AlGaN Light Emitting Diodes on Sapphire Substrates
-
Dec
-
T. Egawana, T. Jimbo, and M. Umeno, "Characteristics of InGaN/AlGaN Light-Emitting Diodes on Sapphire Substrates," J. Appl. Phys., vol. 82, pp. 5816-5821, Dec. 1997.
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 5816-5821
-
-
Egawana, T.1
Jimbo, T.2
Umeno, M.3
|