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Volumn 75, Issue 17, 1999, Pages 2545-2547

Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions

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EID: 0000718266     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125072     Document Type: Article
Times cited : (41)

References (17)
  • 3
    • 0012038640 scopus 로고    scopus 로고
    • Michael Faraday House, London
    • S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2014 (1998); J. J. Song and W. Shan, Gallium Nitride and Related Semiconductors (Michael Faraday House, London, 1999), p. 596.
    • (1999) Gallium Nitride and Related Semiconductors , pp. 596
    • Song, J.J.1    Shan, W.2
  • 5
    • 0043005066 scopus 로고    scopus 로고
    • S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, and T. Nukai, Appl. Phys. Lett. 68, 3286 (1996); 69, 1477 (1996); 69, 3034 (1996); 69, 4056 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 1477
  • 6
    • 0039855169 scopus 로고    scopus 로고
    • S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, and T. Nukai, Appl. Phys. Lett. 68, 3286 (1996); 69, 1477 (1996); 69, 3034 (1996); 69, 4056 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 3034
  • 7
    • 0042625682 scopus 로고    scopus 로고
    • S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, and T. Nukai, Appl. Phys. Lett. 68, 3286 (1996); 69, 1477 (1996); 69, 3034 (1996); 69, 4056 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 4056


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.