Influence of dislocations on photoluminescence of InGaNGaN multiple quantum wells

Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

  Zhang, J C ^a   Jiang, D S ^a   Sun, Q ^a   Wang, J F ^a   Wang, Y T ^a   Liu, J P ^a   Chen, J ^a   Jin, R Q ^a   Zhu, J J ^a   Yang, H ^a   Dai, T ^b   Jia, Q J ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF PHYSICS   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; EDGE DISLOCATIONS; INTERFACE ROUGHNESS; SATELLITE PEAK;

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 24144497766     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2012531     Document Type: Article

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