Photovoltaic effects in InGaN structures with p-n junctions

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 12, 2007, Pages 4288-4291

  Yang, Cuibai ^a   Wang, Xiaoliang ^a   Xiao, Hongling ^a   Ran, Junxue ^a   Wang, Cuimei ^a   Hu, Guoxin ^a   Wang, Xinhua ^a   Zhang, Xiaobin ^a   Li, Jianping ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

SCHOTTKY BARRIER; SHORT CIRCUIT CURRENT; ULTRAVIOLET ILLUMINATION;

ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 38049160893     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723202     Document Type: Article

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