SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 29, Issue 2, 2011, Pages

Effects of InGaN/GaN superlattice absorption layers on the structural and optical properties of InGaN solar cells

(3) Tsai, Chia Lung a Fan, Gong Cheng a Lee, Yu Sheng a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM; INDIUM ALLOYS; INDIUM METALLOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SOLAR POWER GENERATION; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITIES; EXCITON LOCALIZATION; HIGH RESOLUTION X RAY DIFFRACTION; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE ANALYSIS; PHOTOVOLTAIC CHARACTERISTICS; STRUCTURAL AND OPTICAL PROPERTIES; SUPERLATTICE ABSORPTION;

SOLAR CELLS;

EID: 79953778018 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3554837 Document Type: Article

Times cited : (7)

References (25)

1
- 34249332414
- Status and future of high-power light-emitting diodes for solid-state lighting
- DOI 10.1109/JDT.2007.895339
- M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, J. Disp. Technol. 1551-319X 3, 160 (2007). 10.1109/JDT.2007.895339 (Pubitemid 46808672)
- (2007) IEEE/OSA Journal of Display Technology , vol.3 , Issue.2 , pp. 160-175
- Krames, M.R.¹ Shchekin, O.B.² Mueller-Mach, R.³ Mueller, G.O.⁴ Zhou, L.⁵ Harbers, G.⁶ Craford, M.G.⁷

2
- 67650711664
- 0021-8979, 10.1063/1.3155798
- J. Wu, J. Appl. Phys. 0021-8979 106, 011101 (2009). 10.1063/1.3155798
- (2009) J. Appl. Phys. , vol.106 , pp. 011101
- Wu, J.¹

3
- 34848905285
- Design and characterization of GaNInGaN solar cells
- DOI 10.1063/1.2793180
- O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, Appl. Phys. Lett. 0003-6951 91, 132117 (2007). 10.1063/1.2793180 (Pubitemid 47502577)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132117
- Jani, O.¹ Ferguson, I.² Honsberg, C.³ Kurtz, S.⁴

4
- 0032516703
- 0036-8075, 10.1126/science.281.5379.956
- S. Nakamura, Science 0036-8075 281, 956 (1998). 10.1126/science.281.5379. 956
- (1998) Science , vol.281 , pp. 956
- Nakamura, S.¹

5
- 84877047713
- San Diego, CA, (unpublished)
- O. Jani, B. Jampana, M. Mehta, H. Yu, I. Ferguson, R. Opila, and C. Honsberg, Proceeding of the 33rd IEEE Photovoltaic Specialists Conference, San Diego, CA, 2008 (unpublished), pp. 1-4.
- (2008) Proceeding of the 33rd IEEE Photovoltaic Specialists Conference , pp. 1-4
- Jani, O.¹ Jampana, B.² Mehta, M.³ Yu, H.⁴ Ferguson, I.⁵ Opila, R.⁶ Honsberg, C.⁷

6
- 17644370007
- 1-xN tandem PV structures
- DOI 10.1016/j.solmat.2004.08.020, PII S0927024804003770, SCELL-2004
- H. Hamzaoui, A. S. Bouazzi, and B. Rezig, Sol. Energy Mater. Sol. Cells 0927-0248 87, 595 (2005). 10.1016/j.solmat.2004.08.020 (Pubitemid 40556604)
- (2005) Solar Energy Materials and Solar Cells , vol.87 , Issue.1-4 , pp. 595-603
- Hamzaoui, H.¹ Bouazzi, A.S.² Rezig, B.³

7
- 60349107985
- 0003-6951, 10.1063/1.3081123
- R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 0003-6951 94, 063505 (2009). 10.1063/1.3081123
- (2009) Appl. Phys. Lett. , vol.94 , pp. 063505
- Dahal, R.¹ Pantha, B.² Li, J.³ Lin, J.Y.⁴ Jiang, H.X.⁵

8
- 62549121579
- 0741-3106, 10.1109/LED.2008.2012275
- J. K. Sheu, C. C. Yang, S. J. Tu, K. H. Chang, M. L. Lee, W. C. Lai, and L. C. Peng, IEEE Electron Device Lett. 0741-3106 30, 225 (2009). 10.1109/LED.2008.2012275
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 225
- Sheu, J.K.¹ Yang, C.C.² Tu, S.J.³ Chang, K.H.⁴ Lee, M.L.⁵ Lai, W.C.⁶ Peng, L.C.⁷

9
- 36549008701
- InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
- DOI 10.1016/j.spmi.2007.05.001, PII S0749603607001450
- F. K. Yam and Z. Hassan, Superlattices Microstruct. 0749-6036 43, 1 (2008). 10.1016/j.spmi.2007.05.001 (Pubitemid 350180341)
- (2008) Superlattices and Microstructures , vol.43 , Issue.1 , pp. 1-23
- Yam, F.K.¹ Hassan, Z.²

10
- 58149229131
- 0003-6951, 10.1063/1.3056628
- X. Zheng, R. H. Horng, D. S. Wuu, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu, Appl. Phys. Lett. 0003-6951 93, 261108 (2008). 10.1063/1.3056628
- (2008) Appl. Phys. Lett. , vol.93 , pp. 261108
- Zheng, X.¹ Horng, R.H.² Wuu, D.S.³ Chu, M.T.⁴ Liao, W.Y.⁵ Wu, M.H.⁶ Lin, R.M.⁷ Lu, Y.C.⁸

11
- 16244418117
- Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
- DOI 10.1049/el:20058045
- J. B. Rodriguez, P. Christol, A. Ouvrard, F. Chevrier, P. Grech, and A. Joullí, Electron. Lett. 0013-5194 41, 362 (2005). 10.1049/el:20058045 (Pubitemid 40450171)
- (2005) Electronics Letters , vol.41 , Issue.6 , pp. 362-363
- Rodriguez, J.B.¹ Christol, P.² Ouvrard, A.³ Chevrier, F.⁴ Grech, P.⁵ Joullie, A.⁶

12
- 4944261021
- 0031-9007, 10.1103/PhysRevLett.69.2772
- J. B. Pendry and A. Mackinnon, Phys. Rev. Lett. 0031-9007 69, 2772 (1992). 10.1103/PhysRevLett.69.2772
- (1992) Phys. Rev. Lett. , vol.69 , pp. 2772
- Pendry, J.B.¹ MacKinnon, A.²

13
- 0000969646
- 0021-8979, 10.1063/1.365671
- T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka, J. Appl. Phys. 0021-8979 82, 3528 (1997). 10.1063/1.365671
- (1997) J. Appl. Phys. , vol.82 , pp. 3528
- Kawashima, T.¹ Yoshikawa, H.² Adachi, S.³ Fuke, S.⁴ Ohtsuka, K.⁵

14
- 0000124379
- 1-yN alloys
- DOI 10.1063/1.1320007
- G. M. Laws, E. C. Larkins, I. Harrison, C. Molloy, and D. Somerford, J. Appl. Phys. 0021-8979 89, 1108 (2001). 10.1063/1.1320007 (Pubitemid 33661864)
- (2001) Journal of Applied Physics , vol.89 , Issue.2 , pp. 1108-1115
- Laws, G.M.¹ Larkins, E.C.² Harrison, I.³ Molloy, C.⁴ Somerford, D.⁵

15
- 33750077635
- On the interpretation of structural and light emitting properties of InGaN/GaN epitaxial layers grown above and below the critical layer thickness
- DOI 10.1016/j.tsf.2005.12.144, PII S0040609005023916, International Conference on Surfaces, Coatings and Nanostructured Materials nanoSMat 2005
- S. Pereira, Thin Solid Films 0040-6090 515, 164 (2006). 10.1016/j.tsf.2005.12.144 (Pubitemid 44574369)
- (2006) Thin Solid Films , vol.515 , Issue.1 , pp. 164-169
- Pereira, S.¹

16
- 54849411717
- 0031-8965, 10.1002/pssa.200778695
- X. Chen, K. D. Matthews, D. Hao, W. J. Schaff, and L. F. Eastman, Phys. Status Solidi A 0031-8965 205, 1103 (2008). 10.1002/pssa.200778695
- (2008) Phys. Status Solidi A , vol.205 , pp. 1103
- Chen, X.¹ Matthews, K.D.² Hao, D.³ Schaff, W.J.⁴ Eastman, L.F.⁵

17
- 0032089896
- 0022-0248, 10.1016/S0022-0248(98)00149-3
- Y. Kawaguchi, J. Cryst. Growth 0022-0248 189-190, 24 (1998). 10.1016/S0022-0248(98)00149-3
- (1998) J. Cryst. Growth , vol.189-190 , pp. 24
- Kawaguchi, Y.¹

18
- 0034510684
- Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs
- DOI 10.1016/S0022-0248(00)00715-6
- D. J. Kim, Y. T. Moon, K. M. Song, C. J. Choi, Y. W. Ok, T. Y. Seong, and S. J. Park, J. Cryst. Growth 0022-0248 221, 368 (2000). 10.1016/S0022-0248(00) 00715-6 (Pubitemid 32072031)
- (2000) Journal of Crystal Growth , vol.221 , Issue.1-4 , pp. 368-372
- Kim, D.-J.¹ Moon, Y.-T.² Song, K.-M.³ Choi, C.-J.⁴ Ok, Y.-W.⁵ Seong, T.-Y.⁶ Park, S.-J.⁷

19
- 77749307399
- 0018-9197, 10.1109/JQE.2009.2039197
- S. W. Zeng, X. M. Cai, and B. P. Zhang, IEEE J. Quantum Electron. 0018-9197 46, 783 (2010). 10.1109/JQE.2009.2039197
- (2010) IEEE J. Quantum Electron. , vol.46 , pp. 783
- Zeng, S.W.¹ Cai, X.M.² Zhang, B.P.³

20
- 33749621410
- Accurate measurement and characterization of organic solar cells
- DOI 10.1002/adfm.200600489
- V. Shrotriya, G. Li, Y. Yao, T. Moriarty, K. Emery, and Y. Yang, Adv. Funct. Mater. 1616-301X 16, 2016 (2006). 10.1002/adfm.200600489 (Pubitemid 44547147)
- (2006) Advanced Functional Materials , vol.16 , Issue.15 , pp. 2016-2023
- Shrotriya, V.¹ Li, G.² Yao, Y.³ Moriarty, T.⁴ Emery, K.⁵ Yang, Y.⁶

21
- 0036712442
- Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
- DOI 10.1109/LED.2002.802601, PII 1011092002802601
- X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, IEEE Electron Device Lett. 0741-3106 23, 535 (2002). 10.1109/LED.2002.802601 (Pubitemid 35022947)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.9 , pp. 535-537
- Cao, X.A.¹ Stokes, E.B.² Sandvik, P.M.³ LeBoeuf, S.F.⁴ Kretchmer, J.⁵ Walker, D.⁶

22
- 0031552806
- 0003-6951, 10.1063/1.119797
- P. G. Eliseev, P. Perlin, J. Lee, and M. Osińskic, Appl. Phys. Lett. 0003-6951 71, 569 (1997). 10.1063/1.119797
- (1997) Appl. Phys. Lett. , vol.71 , pp. 569
- Eliseev, P.G.¹ Perlin, P.² Lee, J.³ Osińskic, M.⁴

23
- 0035971712
- 0003-6951, 10.1063/1.1368374
- T. Wang, J. Bai, S. Sakai, and J. K. Ho, Appl. Phys. Lett. 0003-6951 78, 2617 (2001). 10.1063/1.1368374
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2617
- Wang, T.¹ Bai, J.² Sakai, S.³ Ho, J.K.⁴

24
- 24144497766
- Influence of dislocations on photoluminescence of InGaNGaN multiple quantum wells
- DOI 10.1063/1.2012531, 071908
- J. C. Zhang, Appl. Phys. Lett. 0003-6951 87, 071908 (2005). 10.1063/1.2012531 (Pubitemid 41230639)
- (2005) Applied Physics Letters , vol.87 , Issue.7 , pp. 1-3
- Zhang, J.C.¹ Jiang, D.S.² Sun, Q.³ Wang, J.F.⁴ Wang, Y.T.⁵ Liu, J.P.⁶ Chen, J.⁷ Jin, R.Q.⁸ Zhu, J.J.⁹ Yang, H.¹⁰ Dai, T.¹¹ Jia, Q.J.¹²

25
- 33845953053
- Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
- DOI 10.1063/1.2423232
- J. H. Na, Appl. Phys. Lett. 0003-6951 89, 253120 (2006). 10.1063/1.2423232 (Pubitemid 46035195)
- (2006) Applied Physics Letters , vol.89 , Issue.25 , pp. 253120
- Na, J.H.¹ Taylor, R.A.² Lee, K.H.³ Wang, T.⁴ Tahraoui, A.⁵ Parbrook, P.⁶ Fox, A.M.⁷ Yi, S.N.⁸ Park, Y.S.⁹ Choi, J.W.¹⁰ Lee, J.S.¹¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.