Indium induced step transformation during InGaN growth on GaN

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Koleske, D D ^a   Lee, S R ^a   Thaler, G ^a,b   Crawford, M H ^a   Coltrin, M E ^a   Cross, K C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Lasertel Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; FILM STRAIN; GAN TEMPLATE; GROUP III NITRIDES; IN-PLANE; INGAN/GAN; PIEZO-ELECTRIC FIELDS; QUANTUM-WELLS; STEP STRUCTURE; WURTZITES;

GALLIUM ALLOYS; MONOLAYERS; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 77956013247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3479414     Document Type: Article

References (19)

1. Y. Narukawa, J. Narita, T. Sakamoto, T. Yamada, H. Narimatsu, M. Sano, and T. Mukai, Phys. Status Solidi A PSSABA 0031-8965 204, 2087 (2007). 10.1002/pssa.200674782
2. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, J. Disp. Technol. IJDTAL 1551-319X 3, 160 (2007). 10.1109/JDT.2007.895339
3. S. Nakamura, Science SCIEAS 0036-8075 281, 956 (1998). 10.1126/science.281.5379.956
4. K. P. O'Donnell, J. F. W. Mosselmans, R. W. Martin, S. Pereira, and M. E. White, J. Phys.: Condens. Matter JCOMEL 0953-8984 13, 6977 (2001). 10.1088/0953-8984/13/32/307
5. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, Nature Mater. NMAACR 1476-1122 5, 810 (2006). 10.1038/nmat1726
6. D. M. Graham, A. Soltani-Vala, P. Dawson, M. J. Godfrey, T. M. Smeeton, J. S. Barnard, M. J. Kappers, C. J. Humphreys, and E. J. Thrush, J. Appl. Phys. JAPIAU 0021-8979 97, 103508 (2005). 10.1063/1.1897070
7. A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett. PRLTAO 0031-9007 95, 127402 (2005). 10.1103/PhysRevLett.95.127402
8. S. Sonderegger, E. Feltin, M. Merano, A. Crottini, J. F. Carlin, R. Sachot, B. Deveaud, N. Grandjean, and J. D. Ganìre, Appl. Phys. Lett. APPLAB 0003-6951 89, 232109 (2006). 10.1063/1.2397562
9. T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, Appl. Phys. Lett. APPLAB 0003-6951 85, 3089 (2004). 10.1063/1.1804607
10. D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, Appl. Phys. Lett. APPLAB 0003-6951 81, 1940 (2002). 10.1063/1.1506793
11. S. R. Lee, A. M. West, A. A. Allerman, K. E. Waldrip, D. M. Follstaedt, P. P. Provencio, D. D. Koleske, and C. R. Abernathy, Appl. Phys. Lett. APPLAB 0003-6951 86, 241904 (2005). 10.1063/1.1947367
12. Panalytical's X'PERT EPITAXY software, Version 4.0.
13. I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum. RSINAK 0034-6748 78, 013705 (2007). 10.1063/1.2432410
14. M. V. Ramana Murty, P. Fini, G. B. Stephenson, C. Thompson, J. A. Eastman, A. Munkholm, O. Auciello, R. Jothilingam, S. P. DenBaars, and J. S. Speck, Phys. Rev. B PLRBAQ 0556-2805 62, R10661 (2000). 10.1103/PhysRevB.62. R10661
15. B. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 85, 6470 (1999). 10.1063/1.370150
16. The measured AFM line scan, f (x), is a convolution of the atomic step structure, h (x), and instrumental function, g (x), which includes the tip shape and scan rate, and f (x) =h (x) g (x). The first derivative of f (x), is /x [h (x) g (x)] = h′ (x) g (x) =h (x) g′ (x), showing that f′ (x) involves h′ (x).
17. Y. H. Xie, G. H. Gilmer, C. Roland, P. J. Silverman, S. K. Buratto, J. Y. Cheng, E. A. Fitzgerald, A. R. Kortan, S. Schuppler, M. A. Marcus, and P. H. Citrin, Phys. Rev. Lett. PRLTAO 0031-9007 73, 3006 (1994). 10.1103/PhysRevLett. 73.3006
18. Lattice constant for GaN is 0.3189 nm and 20% indium concentration InGaN would be 0.3265 nm, assuming Vegard's Law is obeyed, L. Vegard, Z. Phys. ZEPYAA 0044-3328 5, 17 (1921), results in a aInGaN / aGaN =1.024 10.1007/BF01349680;
19. Properties of Group III Nitrides, edited by, J. H. Edgar, (Institution of Electrical Engineers, London, 1994).