Indium surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 49-53

  Waltereit, P ^a,c   Brandt, O ^a   Ploog, K H ^a   Tagliente, M A ^b   Tapfer, L ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541050     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<49::AID-PSSB49>3.0.CO;2-C     Document Type: Article

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